Influence of interface within the composite barrier on the tunneling electroresistance of ferroelectric tunnel junctions with symmetric electrodes

被引：1
|
作者：
Wang Pin-Zhi [1 ,2 ]
Zhu Su-Hua [2 ]
Pan Tao [3 ]
Wu Yin-Zhong [2 ,3 ]
机构：
[1] Soochow Univ, Dept Phys, Suzhou 215006, Peoples R China
[2] Changshu Inst Technol, Dept Phys, Changshu 215500, Peoples R China
[3] Suzhou Univ Sci & Technol, Sch Math & Phys, Suzhou 215009, Peoples R China
来源：
CHINESE PHYSICS B | 2015年 / 24卷 / 02期
基金：
中国国家自然科学基金;
关键词：
ferroelectric tunnel junction; interface effect; tunneling electroresistance;
D O I：
10.1088/1674-1056/24/2/027301
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The interface with a pinned dipole within the composite barrier in a ferroelectric tunnel junction (FTJ) with symmetric electrodes is investigated. Different from the detrimental effect of the interface between the electrode and barrier in previous studies, the existence of an interface between the dielectric SrTiO3 slab and ferroelectric BaTiO3 slab in FTJs will enhance the tunneling electroresistance (TER) effect. Specifically, the interface with a lower dielectric constant and larger polarization pointing to the ferroelectric slab favors the increase of TER ratio. Therefore, interface control of high performance FTJ can be achieved.
引用
收藏
页数：4
相关论文
共 28 条
  • [1] Influence of interface within the composite barrier on the tunneling electroresistance of ferroelectric tunnel junctions with symmetric electrodes
    王品之
    朱素华
    潘涛
    吴银忠
    ChinesePhysicsB, 2015, 24 (02) : 376 - 379
  • [2] Electroresistance Effect in Ferroelectric Tunnel Junctions with Symmetric Electrodes
    Bilc, Daniel I.
    Novaes, Frederico D.
    Iniguez, Jorge
    Ordejon, Pablo
    Ghosez, Philippe
    ACS NANO, 2012, 6 (02) : 1473 - 1478
  • [3] Effect of epitaxial strain on tunneling electroresistance in ferroelectric tunnel junctions
    Sokolov, A.
    Bak, O.
    Lu, H.
    Li, S.
    Tsymbal, E. Y.
    Gruverman, A.
    NANOTECHNOLOGY, 2015, 26 (30)
  • [4] Enhancement of tunneling electroresistance by interfacial cation intermixing in ferroelectric tunnel junctions
    Chen, Liming
    Feng, Yuzhang
    Chen, Yequan
    Chen, Yongda
    Liu, Ruxin
    Pan, Danfeng
    Wang, Peng
    Xu, Yongbing
    Zhang, Rong
    Wang, Xuefeng
    APPLIED SURFACE SCIENCE, 2020, 512 (512)
  • [5] Enhancement of tunneling electroresistance in metal/two-dimensional ferroelectric tunnel junctions: route for polarization-modulated interface transport
    He, Shiying
    Zou, Daifeng
    Lei, Chihou
    He, Zhijian
    Liu, Yunya
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2024, 36 (50)
  • [6] Enhanced tunneling electroresistance in Pt/PZT/LSMO ferroelectric tunnel junctions in presence of magnetic field
    Barrionuevo, D.
    Zhang, Le
    Ortega, N.
    Sokolov, A.
    Kumar, A.
    Scott, J. F.
    Katiyar, R. S.
    INTEGRATED FERROELECTRICS, 2016, 174 (01) : 174 - 185
  • [7] Low-Temperature Tunneling Electroresistance in Ferromagnetic Metal/Ferroelectric/Semiconductor Tunnel Junctions
    Chen, Liming
    Zhou, Jian
    Zhang, Xiao
    Ding, Kuankuan
    Ding, Jianxiang
    Sun, Zhengming
    Wang, Xuefeng
    ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (19) : 23282 - 23288
  • [8] Giant Tunneling Electro-Resistance in Ultrathin Ferroelectric Tunnel Junctions: The Interface Barrier Gain Mechanism
    Yu, Xing
    Zhang, Xiwen
    Ma, Liang
    Wang, Jinlan
    ADVANCED FUNCTIONAL MATERIALS, 2024, 34 (49)
  • [9] Poling Sequence-Dependent Tunneling Electroresistance in HfO2-Based Ferroelectric Tunnel Junctions
    Ruan, Yongqi
    Zhang, Qi
    Lord, Michael
    Guo, Yizhong
    Wang, Jinzhao
    Liu, Jiaolian
    Ma, Zhijun
    Zhou, Peng
    Zhang, Tianjin
    Valanoor, Nagarajan
    ACS APPLIED ELECTRONIC MATERIALS, 2022, 4 (11) : 5171 - 5176
  • [10] Electrodes: the real performers in single-barrier ferroelectric tunnel junctions
    Ipsita, Sushree
    Sahu, Sunil Ku.
    Mahapatra, P. K.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2023, 129 (09):
123