Hf0.5Zr0.5O2-Based Ferroelectric Field-Effect Transistors With HfO2 Seed Layers for Radiation-Hard Nonvolatile Memory Applications

被引：27

作者：

Liu, Chen ^{[1
]}

Xiao, Wenwu ^{[1
]}

Peng, Yue ^{[2
]}

Zeng, Binjian ^{[1
]}

Zheng, Shuaizhi ^{[1
]}

Yin, Lu ^{[1
]}

Peng, Qiangxiang ^{[1
]}

Zhong, Xiangli ^{[1
]}

Liao, Min ^{[1
,3
]}

Zhou, Yichun ^{[1
,3
]}

机构：

[1] Xiangtan Univ, Sch Mat Sci & Engn, Minist Educ, Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Peoples R China

[2] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China

[3] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Endurance; ferroelectric field-effect transistor (FeFET); high-k seed layer; retention; total ionizing dose (TID) effect; FILMS;

D O I：

10.1109/TED.2021.3095036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hf0.5Zr0.5O2 (HZO)-based ferroelectric fieldeffect transistors (FeFETs) with HfO2 seed layer were investigated for radiation-hard nonvolatile memory applications. First, it was found that the HZO thin films grown on HfO2 seed layer showed improved crystallinity and ferroelectricity compared with those directly grown on SiO2 thin film, leading to a largermemory window (MW), better endurance, and retention properties of the HZO-based FeFETs with HfO2 seed layers. Moreover, after 1 Mrad(Si) Co-60 gamma-ray irradiation, the memory properties of the HZO-based FeFETs with HfO2 seed layer were also better than those without the HfO2 seed layer. Especially, the HZO-based FeFETs with an HfO2 seed layer have a larger remaining MW (0.66 V) than that (0.29 V) of the FeFETs without an HfO2 seed layer after 1 x 10(4) program/erase cycle. This work represents a first attempt to realize the high performances of radiation-hard HfO2-based FeFETs.

引用

页码：4368 / 4372

页数：5

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