Two-step epitaxial lateral overgrowth of GaN

被引：8
|
作者：
Ko, CH
Su, YK
Chang, SJ
Tsai, TY
Kuan, TM
Lan, WH
Lin, JC
Lin, WJ
Cherng, YT
Webb, JB
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Chung Shan Inst Sci & Technol, Mat & Electroopt Res Div, Lungtan, Taiwan
[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2003年 / 82卷 / 01期
关键词：
GaN; epitaxial lateral overgrowth (ELO); metalorganic vapor phase epitaxy (MOVPE); etch pits density (EPD);
D O I：
10.1016/S0254-0584(03)00228-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A two-step epitaxial lateral overgrowth (ELO) method was proposed to improve the quality of GaN-based epitaxial layers. In the first step, we grew a three-dimensional GaN low temperature buffer layer at 520 degreesC for different amount of time, and the second step is similar to conventional ELO. For two-step ELO GaN samples on SiO2 stripes along <(11 (2) over bar0> direction, it was found that an 8 min first step growth time could provide us the highest lateral to vertical growth rate ratio and the largest angle between sidewalls and basal plane. Under such growth conditions, we could achieve a surface root-mean-square (rms) roughness of 0.480 nm and an etch pits density (EPD) of 1.6 x 107 cm(-2) in the stripe regions. The surface morphology of the two-step ELO GaN sample is also much better than that of the one-step ELO GaN sample. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：55 / 60
页数：6
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