Anodization of AA1050 foil in 0.3 M oxalic acid at 50 V was performed and nanoporous alumina was formed. Four various approaches of electrochemical barrier layer thinning with varied voltage steps were applied to optimize the experimental conditions. Scanning electron microscopy was employed to investigate the bottoms of the anodic alumina after electrochemical barrier layer thinning. Values of the barrier layer thickness derived from Bode plots extrapolations confirmed the FE-SEM observations. For the most suitable barrier layer the thinning procedure was applied to successfully form nickel nanowires via pulse electrodeposition. (C) 2015 Elsevier B.V. All rights reserved.
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Seoul Natl Univ, Dept Mat Sci & Engn, Natl Core Res Program, Nano Syst Inst, Seoul 151742, South KoreaSeoul Natl Univ, Dept Mat Sci & Engn, Natl Core Res Program, Nano Syst Inst, Seoul 151742, South Korea
Park, Sang-Hyun
Kim, Satbyul
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Seoul Natl Univ, Dept Mat Sci & Engn, Natl Core Res Program, Nano Syst Inst, Seoul 151742, South KoreaSeoul Natl Univ, Dept Mat Sci & Engn, Natl Core Res Program, Nano Syst Inst, Seoul 151742, South Korea
Kim, Satbyul
Lee, Do-Joong
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Seoul Natl Univ, Dept Mat Sci & Engn, Natl Core Res Program, Nano Syst Inst, Seoul 151742, South KoreaSeoul Natl Univ, Dept Mat Sci & Engn, Natl Core Res Program, Nano Syst Inst, Seoul 151742, South Korea
Lee, Do-Joong
Yun, Seongjin
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Seoul Natl Univ, Dept Phys & Astron, Natl Core Res Program, Nano Syst Inst, Seoul 151742, South KoreaSeoul Natl Univ, Dept Mat Sci & Engn, Natl Core Res Program, Nano Syst Inst, Seoul 151742, South Korea
Yun, Seongjin
Khim, Zheong Gou
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Seoul Natl Univ, Dept Phys & Astron, Natl Core Res Program, Nano Syst Inst, Seoul 151742, South KoreaSeoul Natl Univ, Dept Mat Sci & Engn, Natl Core Res Program, Nano Syst Inst, Seoul 151742, South Korea
Khim, Zheong Gou
Kim, Ki-Bum
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Seoul Natl Univ, Dept Mat Sci & Engn, Natl Core Res Program, Nano Syst Inst, Seoul 151742, South KoreaSeoul Natl Univ, Dept Mat Sci & Engn, Natl Core Res Program, Nano Syst Inst, Seoul 151742, South Korea
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INESC MN, P-1000029 Lisbon, Portugal
IN, P-1000029 Lisbon, PortugalINESC MN, P-1000029 Lisbon, Portugal
Leitao, D. C.
Ventura, J.
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Univ Porto, Fac Ciencias, IFIMUP, P-4169007 Oporto, Portugal
Univ Porto, Fac Ciencias, Dept Fis & Astron, IN, P-4169007 Oporto, PortugalINESC MN, P-1000029 Lisbon, Portugal
Ventura, J.
Sousa, C. T.
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Univ Porto, Fac Ciencias, IFIMUP, P-4169007 Oporto, Portugal
Univ Porto, Fac Ciencias, Dept Fis & Astron, IN, P-4169007 Oporto, PortugalINESC MN, P-1000029 Lisbon, Portugal
Sousa, C. T.
Teixeira, J. M.
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Univ Porto, Fac Ciencias, IFIMUP, P-4169007 Oporto, Portugal
Univ Porto, Fac Ciencias, Dept Fis & Astron, IN, P-4169007 Oporto, PortugalINESC MN, P-1000029 Lisbon, Portugal
Teixeira, J. M.
Sousa, J. B.
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Univ Porto, Fac Ciencias, IFIMUP, P-4169007 Oporto, Portugal
Univ Porto, Fac Ciencias, Dept Fis & Astron, IN, P-4169007 Oporto, PortugalINESC MN, P-1000029 Lisbon, Portugal
Sousa, J. B.
Jaafar, M.
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Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, SpainINESC MN, P-1000029 Lisbon, Portugal
Jaafar, M.
Asenjo, A.
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CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, SpainINESC MN, P-1000029 Lisbon, Portugal
Asenjo, A.
Vazquez, M.
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CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, SpainINESC MN, P-1000029 Lisbon, Portugal