Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation

被引：4
|
作者：
Allerstam, F. [1 ]
Gudjonsson, G. [1 ]
Sveinbjoernsson, E. O. [1 ]
Roedle, T. [2 ]
Jos, R. [2 ]
机构：
[1] Chalmers, Dept Microtechnol & Nanosci, Microwave Elect Lab, SE-41296 Gothenburg, Sweden
[2] Philips Semicond BV, NL-6534 AE Nijmegen, Netherlands
来源：
SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷
关键词：
deep interface trap; interface states; sodium;
D O I：
10.4028/www.scientific.net/MSF.556-557.517
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This paper reports studies of deep acceptor-type interface traps at the 4H-SiC/SiO2 interface. These traps are created during sodium enhanced oxidation of Si-terminated 4H-SiC. The trap concentration is above 3x10(12) cm(-2) and their activation energy is larger than 0.8 eV.
引用
收藏
页码：517 / +
页数：2
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