Microcrystalline p-i-n cells: a drift-controlled device?

被引：6

作者：

Wyrsch, N ^{[1
]}

Torres, P ^{[1
]}

Meier, J ^{[1
]}

Shah, A ^{[1
]}

机构：

[1] Univ Neuchatel, Inst Microtech, CH-2000 Neuchatel, Switzerland

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

关键词：

mu c-Si : H; solar cells; transport properties;

D O I：

10.1016/S0022-3093(98)00303-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The objective of this paper is to get more insight into the physics of microcrystalline silicon based solar cell by studying electric field profiles, spectral responses and current-voltage characteristics. Based on a comparison with a-Si:H p-i-n and c-Si p-n diodes, we concluded that mu c-Si:H p-i-n devices are not field-controlled despite the presence of a high electric field in the i-layer. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：1272 / 1276

页数：5

共 9 条

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