Breakdown of quantum Hall effect in two dimensional electron system with antidot arrays

被引：0
|
作者：
Sanuki, T
Takaoka, S
Oto, K
Murase, K
Gamo, K
机构：
[1] Osaka Univ, Dept Phys, Grad Sch Sci, Toyonaka, Osaka 560, Japan
[2] Osaka Univ, Div Adv Elect & Opt Sci, Grad Sch Engn Sci, Toyonaka, Osaka 560, Japan
来源：
SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 7-8期
关键词：
D O I：
10.1016/S0038-1101(97)00322-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the influence of antidot arrays on the breakdown of quantum Hall effect (QHE) in GaAs/AlGaAs heterostructures. In the samples without antidots: the value of the critical current remarkably decrease with increasing electron densities by illumination. In the samples with antidot arrays, the critical current still keeps its high value at relatively high electron density after illumination. These results indicate that the antidots can act as artificial potential fluctuations and modify the current distribution in QHE regime. (C) 1998 Elsevier Science Ltd. All rights reserved.
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收藏
页码：1165 / 1167
页数：3
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