Gate Driver Design for 1.2 kV SiC Module with PCB Integrated Rogowski Coil Protection Circuit

被引:7
作者
Stecca, Marco [1 ]
Tiftikidis, Panagiotis [1 ]
Soeiro, Thiago Batista [1 ]
Bauer, Pavol [1 ]
机构
[1] Delft Univ Technol, Elect Sustainable Energy Dept, Delft, Netherlands
来源
2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2021年
关键词
D O I
10.1109/ECCE47101.2021.9595589
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Wide band-gap materials, e.g., Silicon Carbide (SiC), allow the realization of power semiconductor with superior performance with respect to the traditional Si-based counterparts. On the other hand they require more stringent short-circuit or over-current clearing time to safeguard the device lifetime. This paper focuses on the analysis, design guidelines and practical implementation of a gate drive circuit incorporating fast short-circuit/over-current protection (< 1 mu s) based on the device di/dt measurement through PCB-based auxiliary Rogowski coils. The target power module is a industry standard 62mm packaged 1.2kV SiC MOSFET half-bridge. The gale driver protection features are experimentally tested and the target time for the short circuit clearing was satisfied, with the gate driver effectively turning off the switches within 400 us during a short-circuit test.
引用
收藏
页码:5723 / 5728
页数:6
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