Quantum mechanical effects on characteristics of MOSFET in low temperature operation

被引：0

作者：

Ma, YT ^{[1
]}

Chen, WS ^{[1
]}

Liu, LT ^{[1
]}

Tian, LL ^{[1
]}

Li, ZJ ^{[1
]}

机构：

[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

CHINESE JOURNAL OF ELECTRONICS | 2000年 / 9卷 / 04期

关键词：

quantum mechanical effects (QMEs); low temperatures; MOSFET; threshold voltage shift; inversion layer carrier sheet density;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum Mechanical Effects (QMEs) on MOSFET inversion layer carrier density and threshold voltage were studied under different temperatures (77K similar to 400K) and different substrate doping concentration (10(16)cm(-3) similar to 10(18)cm(-3)). The studies show that QMEs will have more influences on MOSFET characteristics in low temperature. It is observed that although QMEs have a severe influence on carrier sheet density in low temperature, the excellent sub-threshold characteristics of MOSFET in low temperature remain unchanged. It is also shown that the temperature dependence of QMEs is stronger in weak inversion region than that in strong inversion region both for carrier sheet density and for threshold voltage shift.

引用

页码：384 / 387

页数：4

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