Versatile p-Type Chemical Doping to Achieve Ideal Flexible Graphene Electrodes

被引：75

作者：

Han, Tae-Hee ^{[1
]}

Kwon, Sung-Joo ^{[1
]}

Li, Nannan ^{[2
]}

Seo, Hong-Kyu ^{[1
]}

Xu, Wentao ^{[1
]}

Kim, Kwang S. ^{[2
]}

Lee, Tae-Woo ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, San 31, Pohang 790784, Gyungbuk, South Korea

[2] UNIST, Dept Chem, Ulsan 689798, South Korea

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2016年 / 55卷 / 21期

基金：

新加坡国家研究基金会;

关键词：

chemical doping; flexible OLEDs; graphene; transparent electrodes; LIGHT-EMITTING-DIODES; SINGLE-LAYER GRAPHENE; INDIUM-TIN-OXIDE; TRIFLUOROMETHANESULFONIC ACID; TRANSPARENT ELECTRODES; CARBON NANOTUBES; PERFORMANCE; ULTRAVIOLET; TRANSISTORS; EFFICIENT;

D O I：

10.1002/anie.201600414

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report effective solution-processed chemical p-type doping of graphene using trifluoromethanesulfonic acid (CF3SO3H, TFMS), that can provide essential requirements to approach an ideal flexible graphene anode for practical applications: i) high optical transmittance, ii) low sheet resistance (70% decrease), iii) high work function (0.83 eV increase), iv) smooth surface, and iv) air-stability at the same time. The TFMS-doped graphene formed nearly ohmic contact with a conventional organic hole transporting layer, and a green phosphorescent organic light-emitting diode with the TFMS-doped graphene anode showed lower operating voltage, and higher device efficiencies (104.1 cd A(-1), 80.7 lm W-1) than those with conventional ITO (84.8 cd A(-1), 73.8 lm W-1).

引用

页码：6197 / 6201

页数：5

共 50 条

[1]

[Anonymous], 2009, ANGEW CHEM

[2]

Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/NNANO.2010.132, 10.1038/nnano.2010.132]

[3]

Bonaccorso F, 2010, NAT PHOTONICS, V4, P611, DOI [10.1038/NPHOTON.2010.186, 10.1038/nphoton.2010.186]

[4] Doping dependence of the Raman peaks intensity of graphene close to the Dirac point [J].

Casiraghi, C. .

PHYSICAL REVIEW B, 2009, 80 (23)

[5] Improvement of work function and hole injection efficiency of graphene anode using CHF3 plasma treatment [J].

Cho, Himchan ;

Kim, Seong Dae ;

Han, Tae-Hee ;

Song, Intek ;

Byun, Jin-Woo ;

Kim, Young-Hoon ;

Kwon, Sungjoo ;

Bae, Sang-Hoon ;

Choi, Hee Cheul ;

Ahn, Jong-Hyun ;

Lee, Tae-Woo .

2D MATERIALS, 2015, 2 (01)

[6] Improved Performance of Organic Light-Emitting Diodes Fabricated on Al-Doped ZnO Anodes Incorporating a Homogeneous Al-Doped ZnO Buffer Layer Grown by Atomic Layer Deposition [J].

Choi, Yong-June ;

Gong, Su Cheol ;

Park, Chang-Sun ;

Lee, Hong-Sub ;

Jang, Ji Geun ;

Chang, Ho Jung ;

Yeom, Geun Young ;

Park, Hyung-Ho .

ACS APPLIED MATERIALS & INTERFACES, 2013, 5 (09) :3650-3655

[7] Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor [J].

Das, A. ;

Pisana, S. ;

Chakraborty, B. ;

Piscanec, S. ;

Saha, S. K. ;

Waghmare, U. V. ;

Novoselov, K. S. ;

Krishnamurthy, H. R. ;

Geim, A. K. ;

Ferrari, A. C. ;

Sood, A. K. .

NATURE NANOTECHNOLOGY, 2008, 3 (04) :210-215

[8] ELECTROCHEMICAL STUDIES OF SULFONATES IN NON-AQUEOUS SOLVENTS .3. TRIFLUOROMETHANESULFONIC ACID AS A STRONG ACID IN DIPOLAR APROTIC-SOLVENTS AND ACETIC-ACID [J].

FUJINAGA, T ;

SAKAMOTO, I .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1977, 85 (01) :185-201

[9] Chemically Modified Graphene Based Supercapacitors for Flexible and Miniature Devices [J].

Ghosh, Debasis ;

Kim, Sang Ouk .

ELECTRONIC MATERIALS LETTERS, 2015, 11 (05) :719-734

[10] Layer-by-Layer Doping of Few-Layer Graphene Film [J].

Gunes, Fethullah ;

Shin, Hyeon-Jin ;

Biswas, Chandan ;

Han, Gang Hee ;

Kim, Eun Sung ;

Chae, Seung Jin ;

Choi, Jae-Young ;

Lee, Young Hee .

ACS NANO, 2010, 4 (08) :4595-4600

← 1 2 3 4 5 →