Electron transport through indium atomic chain arrays self-assembled on a silicon surface

被引：0

作者：

Uchihashi, T ^{[1
]}

Ramsperger, U ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 18卷 / 1-3期

关键词：

atomic chains; electron transport; self-assembling; metal-insulator transition;

D O I：

10.1016/S1386-9477(02)00981-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We clarify electron conduction through indium atomic chain arrays self-assembled on a clean silicon surface. The conductivity of indium chain arrays is extracted through the comparison of two surface structures, one of which includes intentionally introduced defects in the middle of chains. It exhibits a sudden significant drop around 130 K with decreasing temperature, revealing a metal-insulator phase transition. The influence of the finite domain size of the indium chains is discussed. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：227 / 228

页数：2

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