A Novel Lame Mode RF-MEMS resonator with high quality factor

被引:26
作者
Chen, Zeji [1 ,2 ,3 ]
Wang, Tianyun [1 ,2 ,3 ]
Jia, Qianqian [1 ,2 ,3 ]
Yang, Jinling [1 ,2 ,3 ]
Yuan, Quan [1 ,2 ,3 ]
Zhu, Yinfang [1 ,2 ,3 ]
Yang, Fuhua [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Qinghua East Rd 35A, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] State Key Lab Transducer Technol, Shanghai 200050, Peoples R China
基金
中国国家自然科学基金;
关键词
Bias voltage; Fabrication methodology; Lame mode; Loss mechanisms; Quality factor; MEMS resonator; FILM; TECHNOLOGY; LIMITS;
D O I
10.1016/j.ijmecsci.2021.106484
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
A B S T R A C T This work presents a high-performance Lame mode resonator with high Q values. The anchor loss and thermoelastic damping (TED) were effectively decreased with the optimized tether design and etch hole distribution. A simple and reliable process was developed to batch fabricate the Lame mode resonators with nano-scale spacing gap. In air, a low bias voltage of 2.5 V can excite a resonance peak height over 26 dB for the resonator with high Q of 8900. In vacuum, the required bias voltage was further down to 1.5 V, which is the lowest one among the reported Lame mode resonators. A boosted Q value of 128400 was obtained, corresponding to the highest f x Q product of 6.60 x 10 12 among the state-of-art perforated ones. Moreover, the nonlinearities were experimentally observed, which provides helpful guidance on the stable operation of the resonators. The proposed resonator could have potential in building up advanced wireless communication systems with low power consumption and high-level integration.
引用
收藏
页数:9
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