Effect of Rashba spin-orbit coupling on the electronic, thermodynamic, magnetic and transport properties of GaAs, InAs and InSb quantum dots with Gaussian confinement

被引：30

作者：

Boda, Aalu ^{[1
]}

Boyacioglu, Bahadir ^{[2
]}

Erkaslan, Ugur ^{[3
]}

Chatterjee, Ashok ^{[1
]}

机构：

[1] Univ Hyderabad, Sch Phys, Hyderabad 500046, Andhra Pradesh, India

[2] Ankara Univ, Vocat Sch Hlth Serv, TR-06290 Ankara, Turkey

[3] Mugla Sitki Kocman Univ, Dept Phys, Fac Sci, TR-48170 Kotekli Mugla, Turkey

来源：

PHYSICA B-CONDENSED MATTER | 2016年 / 498卷

关键词：

Semiconductor quantum dots; Gaussian confinement; Electronic; thermal; magnetic and transport properties; Rashba spin-orbit interaction; ENERGY;

D O I：

10.1016/j.physb.2016.06.012

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of Rashba spin orbit interaction on the electronic, thermodynamic, magnetic and transport properties of a one-electron Gaussian quantum dot is investigated in the presence of a magnetic field and its interaction with the electron spin using the canonical ensemble approach. The temperature-dependent energy, magnetization, susceptibility, specific heat and the persistent current are calculated as a function of the spin orbit coupling parameter. The results are applied to GaAs, InAs and InSb quantum dots. (C) 2016 Published by Elsevier B.V.

引用

页码：43 / 48

页数：6

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