Plasma nanotexturing of silicon surfaces for photovoltaics applications: influence of initial surface finish on the evolution of topographical and optical properties

被引:6
作者
Fischer, Guillaume [1 ,2 ]
Drahi, Etienne [3 ]
Foldyna, Martin [2 ]
Germer, Thomas A. [4 ]
Johnson, Erik V. [2 ]
机构
[1] Inst Photovolta Ile de France IPVF, 8 Rue Renaissance, F-92160 Antony, France
[2] Univ Paris Saclay, Ecole Polytech, CNRS, LPICM, F-91128 Palaiseau, France
[3] Total SA Renewables, 2 Pl Jean Millier, F-92078 Paris, France
[4] NIST, Sensor Sci Div, Gaithersburg, MD 20899 USA
关键词
OMNIDIRECTIONAL ANTIREFLECTION PROPERTIES; ATOMIC LAYER DEPOSITION; SOLAR-CELLS; BLACK SILICON; PASSIVATION; NANOSTRUCTURES; EFFICIENCY;
D O I
10.1364/OE.25.0A1057
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Using a plasma to generate a surface texture with feature sizes on the order of tens to hundreds of nanometers ("nanotexturing") is a promising technique being considered to improve efficiency in thin, high-efficiency crystalline silicon solar cells. This study investigates the evolution of the optical properties of silicon samples with various initial surface finishes (from mirror polish to various states of micron-scale roughness) during a plasma nanotexturing process. It is shown that during said process, the appearance and growth of nanocone-like structures are essentially independent of the initial surface finish, as quantified by the auto-correlation function of the surface morphology. During the first stage of the process (2 min to 15 min etching), the reflectance and light-trapping abilities of the nanotextured surfaces are strongly influenced by the initial surface roughness; however, the differences tend to diminish as the nanostructures become larger. For the longest etching times (15 min or more), the effective reflectance is less than 5% and a strong anisotropic scattering behavior is also observed for all samples, leading to very elevated levels of lighttrapping. (C) 2017 Optical Society of America
引用
收藏
页码:A1057 / A1071
页数:15
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