AlN-AlN Layer Bonding and Its Thermal Characteristics

被引：15

作者：

Bao, S. ^{[1
,2
]}

Lee, K. H. ^{[1
]}

Chong, G. Y. ^{[2
]}

Fitzgerald, E. A. ^{[1
,3
]}

Tan, C. S. ^{[1
,2
]}

机构：

[1] Singapore MIT Alliance Res & Technol SMART, Singapore 138602, Singapore

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2015年 / 4卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

RAY PHOTOELECTRON-SPECTROSCOPY; ON-INSULATOR; THIN-FILMS; WAFER; SEMICONDUCTOR; CONDUCTIVITY; FABRICATION; LASER;

D O I：

10.1149/2.0121507jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Homogeneous bonding was successfully demonstrated on 150 mm Si wafers by face-to-face direct dielectric bonding of clean and smooth aluminum nitride (AlN) layers. Characterization result from XPS confirms the layer composition and reveals that approximately 5 nm of the layer surface was partially oxidized during processing. After activation, substoichiometric nitrogen bound to aluminum, Al-O and Al-OH bonds were found at the thin film surface. The as-bonded wafer pairs are nearly void and particle free with a high bonding strength of 1527.8 +/- 272.2 mJ/m(2), enabling them to withstand the subsequent process steps. In addition, experimental results have indicated that the AlN-AlN bonded wafers can achieve a 23 and 16% improvement respectively in terms of heat dissipation compared with those using SiO2 and Al2O3 as the bonding layer. It is concluded that this AlN-AlN bonded wafer pairs can exhibit a better heat dissipation capability than other bonded counterparts. (C) The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/),which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. All rights reserved.

引用

页码：P200 / P205

页数：6

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