Raman spectroscopy mapping of Si (001) surface strain induced by Ni patterned micro arrays

被引：1

作者：

Rodriguez-Aranda, F. J. ^{[1
]}

Mendez-Lozoya, J. ^{[1
]}

Gonzalez, F. J. ^{[1
]}

Rodriguez, A. G. ^{[1
]}

机构：

[1] UASLP, CIACYT, Alvaro Obregon 64, San Luis Potosi 78000, Slp, Mexico

来源：

JOURNAL OF APPLIED PHYSICS | 2017年 / 122卷 / 12期

关键词：

UNIAXIAL-STRESS; SILICON; FABRICATION; LITHOGRAPHY; SCATTERING; DIAMOND; SHIFTS; PHONON; PROBE; FILMS;

D O I：

10.1063/1.4985817

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Patterned arrays of nickel microstructures were fabricated by electron beam lithography and DC sputtering on the surface of Si (001) substrates. Influence of the micro-arrays on the Si substrate surface was evaluated using polarized micro-Raman spectroscopy. Raman spectra maps were taken in two configurations (z) over bar (xx)z and (z) over bar (yy)z for arrays of 18.5 mu m x 15.5 mu m. The Si longitudinal optical (LO) phonon shifted to lower vibrational frequencies by 5 cm(-1) in regions near to the vicinities of the Ni micro structures. From the deformation elastic theory, it is found that this frequency shift is explained by an in-plane tensile stress induced by the Ni micro arrays producing a strain of 1.4%. Published by AIP Publishing.

引用

页数：5

共 35 条

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