Preparation of ZnO thin films on sapphire substrates by sol-gel method

被引:34
作者
Kokubun, Y [1 ]
Kimura, H [1 ]
Nakagomi, S [1 ]
机构
[1] Ishinomaki Senshu Univ, Sch Sci & Engn, Dept Informat Technol & Elect, Ishinomaki 9868580, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 8A期
关键词
ZnO; thin film; sol-gel; sapphire; X-ray diffraction; lattice constant;
D O I
10.1143/JJAP.42.L904
中图分类号
O59 [应用物理学];
学科分类号
摘要
ZnO films have been prepared on (0001) sapphire substrates by the sol-gel method from a 2-methoxyethanol solution of zinc acetate dihydrate stabilized by monoethanolamine. The structural properties of the films have been characterized by X-ray diffraction, compared with the films on silica glass substrates. The crystallinity was enhanced in the ZnO films on sapphire substrates by increasing heat-treatment temperature, whereas it was degraded in the films on silica glass substrates at heat-treatment temperatures above 700degreesC. Completely (0001)-oriented ZnO films were successfully prepared by heat-treatment at temperatures above 800degreesC on (0001) sapphire substrates annealed at 1000degreesC in air. The c-axis lattice constants of the ZnO films on sapphire substrates were larger than those of bulk ZnO and ZnO films on silica glass substrates.
引用
收藏
页码:L904 / L906
页数:3
相关论文
共 23 条
[2]   Sol-gel-derived c-axis oriented ZnO thin films [J].
Bao, DH ;
Gu, HS ;
Kuang, AX .
THIN SOLID FILMS, 1998, 312 (1-2) :37-39
[3]   Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (0001) substrates [J].
Chichibu, SF ;
Yoshida, T ;
Onuma, T ;
Nakanishi, H .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (02) :874-877
[4]   RELAXATION PROCESS OF THE THERMAL STRAIN IN THE GAN/ALPHA-AL2O3 HETEROSTRUCTURE AND DETERMINATION OF THE INTRINSIC LATTICE-CONSTANTS OF GAN FREE FROM THE STRAIN [J].
DETCHPROHM, T ;
HIRAMATSU, K ;
ITOH, K ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (10B) :L1454-L1456
[5]   Nucleation and growth of ZnO on (1(1)over-bar-20) sapphire substrates using molecular beam epitaxy [J].
Fons, P ;
Iwata, K ;
Yamada, A ;
Matsubara, K ;
Niki, S ;
Nakahara, K ;
Tanabe, T ;
Takasu, H .
JOURNAL OF CRYSTAL GROWTH, 2001, 227 :911-916
[6]   RELAXATION MECHANISM OF THERMAL-STRESSES IN THE HETEROSTRUCTURE OF GAN GROWN ON SAPPHIRE BY VAPOR-PHASE EPITAXY [J].
HIRAMATSU, K ;
DETCHPROHM, T ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (04) :1528-1533
[7]   FORMATION OF LINBO3 FILMS BY HYDROLYSIS OF METAL ALKOXIDES [J].
HIRANO, S ;
KATO, K .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1988, 100 (1-3) :538-541
[8]   MBE growth and properties of ZnO on sapphire and SiC substrates [J].
Johnson, MAL ;
Fujita, S ;
Rowland, WH ;
Hughes, WC ;
Cook, JW ;
Schetzina, JF .
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (05) :855-862
[9]   Hetero-epitaxial growth of ZnO thin films by atmospheric pressure CVD method [J].
Kashiwaba, Y ;
Katahira, F ;
Haga, K ;
Sekiguchi, T ;
Watanabe, H .
JOURNAL OF CRYSTAL GROWTH, 2000, 221 (221) :431-434
[10]   BAND-GAPS, CRYSTAL-FIELD SPLITTING, SPIN-ORBIT-COUPLING, AND EXCITON BINDING-ENERGIES IN ZNO UNDER HYDROSTATIC-PRESSURE [J].
MANG, A ;
REIMANN, K ;
RUBENACKE, S .
SOLID STATE COMMUNICATIONS, 1995, 94 (04) :251-254