Effect of doping on the performance of multiple quantum well infrared photodetector

被引：3

作者：

Billaha, Md Aref ^{[1
]}

Das, Mukul K. ^{[1
]}

Kumar, Subindu ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Dhanbad, Bihar, India

来源：

IET CIRCUITS DEVICES & SYSTEMS | 2018年 / 12卷 / 05期

关键词：

DARK CURRENT; GAAS; CAMERA;

D O I：

10.1049/iet-cds.2017.0011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study theoretically analyses the performance of multiple quantum well infrared photodetector mainly with the variation of active layer doping. However, the effect of temperature and applied bias has also been studied. Results show that the effect of doping on the responsivity is significant whereas on the dark current is less significant. Effect of temperature on the dark current is more significant compared with that of doping concentration. Moreover, concerning the detectivity of the device, choice of doping plays a significant role on the detector.

引用

页码：551 / 556

页数：6

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