Piezoresistive properties of nanocrystalline silicon thin films deposited on plastic substrates by hot-wire chemical vapor deposition

被引：13

作者：

Alpuim, P. ^{[1
]}

Andrade, M. ^{[1
]}

Sencadas, V. ^{[1
]}

Ribeiro, M. ^{[1
]}

Filonovich, S. A. ^{[1
]}

Lanceros-Mendez, S. ^{[1
]}

机构：

[1] Univ Minho, Dept Phys, P-4800058 Guimaraes, Portugal

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 19期

关键词：

nanocrystalline silicon; piezoresistivity; hot-wire chemical vapor deposition; flexible electronics;

D O I：

10.1016/j.tsf.2006.11.138

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The piezoresistive property of n-type and p-type nanocrystalline silicon thin films deposited on plastic (PEN) at a substrate temperature of 150 degrees C by hot-wire chemical vapor deposition, is studied. The crystalline fraction decreased from 80% to 65% in p-type and from 84% to 62% in n-type films, as the dopant gas-to-silane flow rate ratio was increased from 0. 18% to 3-3.5%. N-type films have negative gauge factor (-11 to - 16) and p-type films have positive gauge factor (9 to 25). In n-type films the higher gauge factors (in absolute value) were obtained by increasing the doping level whereas in p-type films higher gauge factors were obtained by increasing the crystalline fraction. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：7658 / 7661

页数：4

共 11 条

[1] Piezoresistive Sensors on Plastic Substrates Using Doped Microcrystalline Silicon [J].