Stability of Hydrogenated Amorphous Silicon Diodes as Thin Film Temperature Sensors

被引：0
|
作者：
Lovecchio, N. [1 ]
de Cesare, G. [1 ]
Nascetti, A. [2 ]
Buzzin, A. [1 ]
Caputo, D. [1 ]
机构：
[1] Sapienza Univ Rome, Dept Informat Engn Elect & Telecommun, Via Eudossiana 18, I-00184 Rome, Italy
[2] Sapienza Univ Rome, Sch Aerosp Engn, Via Salaria 851-881, I-00138 Rome, Italy
来源：
SENSORS AND MICROSYSTEMS, AISEM 2019 | 2020年 / 629卷
关键词：
Amorphous silicon diodes; Temperature sensors; Stability; Current injection; CHIP; AMPLIFICATION; HEATERS; SYSTEM;
D O I：
10.1007/978-3-030-37558-4_39
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work reports on the characterization of stability of amorphous silicon diodes used as temperature sensors in lab-on-chip systems. We found that under constant forward current injection, the voltage drop over the diode changes depending on the values of current and injection time. The optimized operating conditions for practical applications have been established on the base of the obtained experimental data.
引用
收藏
页码：259 / 264
页数：6
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