Two parameter scaling in 2D transport through a Ge/Si quantum dot array

We present the results of checking the scaling hypothesis for samples, containing high density array of Ge quantum dot in Si. It was shown that both the interaction and the disorder determine the transport mode of the system and the transition from strong to weak localization. The change in the relative disorder without significantly changing the interaction was found to keep the system inside the one-parameter scaling. The role of the interaction in two-parameter scaling was revealed by observing the shift of Gell-Mann-Low scaling function for the samples with large variation in the Coulomb interaction.