Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations

被引：49
作者：
Castellani-Coulié, K
Munteanu, D
Ferlet-Cavrois, V
Autran, JL
机构：
[1] Univ Aix Marseille 1, CNRS, L2MP, UMR 6137, F-13384 Marseille, France
[2] CEA, DAM, DIF, F-91680 Bruyeres Le Chatel, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2005年 / 52卷 / 05期
关键词：
heavy ions; MOS transistor; silicon; silicon-on-insulator; single-event effects;
D O I：
10.1109/TNS.2005.855810
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The sensitivity to heavy ions of a 0.25 mu m fully-depleted SOI n-channel transistor is evaluated by numerical simulation. The variation of the bipolar gain versus LET and particle location in the structure is thoroughly investigated.
引用
收藏
页码：1474 / 1479
页数：6
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