Topological defects in Haldane model and higher Chern numbers in monolayer graphene

被引:5
作者
Chang, Zhi-Wen [1 ]
Hao, Wei-Chang [2 ]
Liu, Xin [1 ]
机构
[1] Beijing Univ Technol, Fac Sci, Inst Theoret Phys, Beijing 100124, Peoples R China
[2] Beihang Univ, Sch Phys, Beijing 100191, Peoples R China
基金
美国国家科学基金会;
关键词
Haldane model; monopole defect; meron defect; higher Chern number; HALL; REALIZATION;
D O I
10.1088/1361-648X/ac98fc
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We consider the Haldane model, a two-band model in monolayer graphene with non-trivial Chern numbers. Two types of topological defects, monopoles and merons, are derived from the model: (a) the monopole defects occur at the Dirac points, where the system experiences a topological transition and the Chern number C takes an indeterminate value. The sign-change of the mass term after this transition indicates different topological states labeled by different C numbers; (b) the meron defects occur as per a varying mass term Summing up the topological charges of the merons leads to the C evaluation for the energy bands of an insulating bulk, and the result we obtain is in full agreement to the past literature. Furthermore, in this paper we propose a high-C model through studying the limitation behavior of the Hamiltonian vector in the neighborhood of the topological defects. It is discovered that two conducting states may arise form the edges, where the lower band of the insulating bulk carries a higher Chern number, C = +/- 2.
引用
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页数:9
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