Reduction of Contact Resistivity by Nano-Textured Contact

被引:0
|
作者
Tsui, Bing-Yue [1 ]
Lee, Ya-Hsin [1 ]
Lee, Chen-Yi [1 ]
机构
[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan
关键词
Contact resistance; contact resistivity; contact area; Schottky barrier; nano-texture;
D O I
10.1007/s11664-020-08236-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The feasibility of reducing contact resistance by adding nano-textures on the contact surface is evaluated by three-dimensional simulation. Upward and downward pyramids and hemispheres are considered, and the effects of contact area and electric field are discussed. The downward nano-texture has a stronger electric field than the upward nano-texture; thus the increasing contact area will be more effectively used and lead to a greater improvement effect. On the other hand, the electric field of the hemisphere nano-texture is lower than that of the pyramid nano-texture. With proper design, the nano-textured contact can effectively reduce contact resistance up to 30-50%. Therefore, the proposed nano-textured contact is a promising approach with contact resistivity approaching physical limits.
引用
收藏
页码:6783 / 6788
页数:6
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