Femtosecond response times and high optical nonlinearity in beryllium-doped low-temperature grown GaAs

被引：69

作者：

Haiml, M ^{[1
]}

Siegner, U

Morier-Genoud, F

Keller, U

Luysberg, M

Specht, P

Weber, ER

机构：

[1] ETH Honggerberg, HPT, Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland

[2] Forschungszentrum Julich, Inst Solid State Res, D-52425 Julich, Germany

[3] Univ Calif Berkeley, Dept Mat Sci & Mineral Engn, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 09期

关键词：

D O I：

10.1063/1.123521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the effect of beryllium doping on the optical nonlinearity and on the carrier dynamics in low-temperature (LT) grown GaAs for various growth temperatures and doping levels. Pump-probe experiments with 20 fs pulses and quantitative measurements of the nonlinear absorption show that in undoped LT GaAs, ultrafast response times are only obtained at the expense of low absorption modulation. In contrast, in Be-doped LT GaAs, high absorption modulation is maintained for response times as short as 100 fs. These results are qualitatively explained accounting for the point-defect-related optical transitions in LT-GaAs. (C) 1999 American Institute of Physics. [S0003-6951(99)02509-7].

引用

页码：1269 / 1271

页数：3

共 16 条

[1] SELF-PHASE MODULATION AND SPECTRAL BROADENING OF OPTICAL PULSES IN SEMICONDUCTOR-LASER AMPLIFIERS [J].

AGRAWAL, GP ;

OLSSON, NA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (11) :2297-2306

[2] DESIGN AND OPERATION OF ANTIRESONANT FABRY-PEROT SATURABLE SEMICONDUCTOR ABSORBERS FOR MODE-LOCKED SOLID-STATE LASERS [J].

BROVELLI, LR ;

KELLER, U ;

CHIN, TH .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1995, 12 (02) :311-322

[3] Above band gap absorption spectra of the arsenic antisite defect in low temperature grown GaAs and AlGaAs [J].

Dankowski, SU ;

Streb, D ;

Ruff, M ;

Kiesel, P ;

Kneissl, M ;

Knupfer, B ;

Dohler, GH ;

Keil, UD ;

Sorenson, CB ;

Verman, AK .

APPLIED PHYSICS LETTERS, 1996, 68 (01) :37-39

[4] SUBPICOSECOND CARRIER LIFETIME IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES [J].

GUPTA, S ;

FRANKEL, MY ;

VALDMANIS, JA ;

WHITAKER, JF ;

MOUROU, GA ;

SMITH, FW ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1991, 59 (25) :3276-3278

[5] Semiconductor saturable absorber mirrors supporting sub-10-fs pulses [J].

Jung, ID ;

Kartner, FX ;

Matuschek, N ;

Sutter, DH ;

MorierGenoud, F ;

Shi, Z ;

Scheuer, V ;

Tilsch, M ;

Tschudi, T ;

Keller, U .

APPLIED PHYSICS B-LASERS AND OPTICS, 1997, 65 (02) :137-150

[6] SOLID-STATE LOW-LOSS INTRACAVITY SATURABLE ABSORBER FOR ND-YLF LASERS - AN ANTIRESONANT SEMICONDUCTOR FABRY-PEROT SATURABLE ABSORBER [J].

KELLER, U ;

MILLER, DAB ;

BOYD, GD ;

CHIU, TH ;

FERGUSON, JF ;

ASOM, MT .

OPTICS LETTERS, 1992, 17 (07) :505-507

[7] Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers [J].

Keller, U ;

Weingarten, KJ ;

Kartner, FX ;

Kopf, D ;

Braun, B ;

Jung, ID ;

Fluck, R ;

Honninger, C ;

Matuschek, N ;

derAu, JA .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1996, 2 (03) :435-453

[8] FEMTOSECOND CARRIER DYNAMICS IN LOW-TEMPERATURE-GROWN INDIUM-PHOSPHIDE [J].

KOSTOULAS, Y ;

WAXER, LJ ;

WALMSLEY, IA ;

WICKS, GW ;

FAUCHET, PM .

APPLIED PHYSICS LETTERS, 1995, 66 (14) :1821-1823

[9]

LILIENTALWEBER Z, 1994, P 8 C SEM 3 5 MAT, P305

[10] MECHANISM RESPONSIBLE FOR THE SEMIINSULATING PROPERTIES OF LOW-TEMPERATURE-GROWN GAAS [J].

LIU, X ;

PRASAD, A ;

CHEN, WM ;

KURPIEWSKI, A ;

STOSCHEK, A ;

LILIENTALWEBER, Z ;

WEBER, ER .

APPLIED PHYSICS LETTERS, 1994, 65 (23) :3002-3004

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