Synthesis and transport properties of Si-doped In2O3(ZnO)3 superlattice nanobelts

被引：10
|
作者：
Zhang, J. Y. [1 ,2 ]
Lang, Y. [1 ,2 ]
Chu, Z. Q. [3 ]
Liu, X. [1 ,2 ]
Wu, L. L. [4 ]
Zhang, X. T. [1 ,2 ]
机构：
[1] Harbin Normal Univ, Heilongjiang Prov Key Lab Low Dimens Syst & Mesos, Harbin 150025, Peoples R China
[2] Harbin Normal Univ, Sch Phys & Elect Engn, Harbin 150025, Peoples R China
[3] Chinese Univ Hong Kong, Dept Phys, Shatin, Hong Kong, Peoples R China
[4] Heilongjiang Inst Sci & Technol, Ctr Engn Training & Basic Experimentat, Harbin 150027, Peoples R China
来源：
CRYSTENGCOMM | 2011年 / 13卷 / 10期
关键词：
TRANSPARENT OXIDE SEMICONDUCTOR; THIN-FILM-TRANSISTOR; HOMOLOGOUS COMPOUNDS; NANOWIRES; SYSTEM;
D O I：
10.1039/c1ce00004g
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Si-doped In2O3(ZnO)(3) superlattice nanobelts were synthesized via chemical vapor deposition. The transmission electron microscopy result indicates that the nanobelts have a superlattice structure. The introduced Si in In2O3(ZnO)(3) nanobelts could exist as Si-Zn as donor dopants, leading to a low resistivity of 6.25 x 10(-3) Omega cm. The transport properties of the nanobelts were measured. A nonlinear I-V characteristic is found in a voltage span of 0.4-1.5 V, which is likely attributed to the superlattice structure with statistical potential distribution around the conduction band edge.
引用
收藏
页码：3569 / 3572
页数：4
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