Growth mechanism of Al2O3 film on an organic layer in plasma-enhanced atomic layer deposition

被引：3

作者：

Lee, J. Y. ^{[1
]}

Kim, D. W. ^{[1
]}

Kang, W. S. ^{[1
]}

Lee, J. O. ^{[1
]}

Hur, M. ^{[1
]}

Han, S. H. ^{[2
]}

机构：

[1] Korea Inst Machinery & Mat, Plasma Engn Lab, 156 Gajeongbuk Ro, Daejeon 34103, South Korea

[2] Samsung Elect Co Ltd, Semicond R&D Ctr, 1 Samsungjeongja Ro, Hwaseong Si 18448, Gyeonggi Do, South Korea

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2018年 / 51卷 / 01期

关键词：

Al2O3 growth mechanism; CxHy layer; optical emission spectroscopy; plasma-enhanced atomic layer deposition; x-ray photoelectron spectroscopy; LOW-TEMPERATURE; ALUMINUM-OXIDE; BARRIER FILMS; POLYMERS; ALD; ELLIPSOMETRY; PERFORMANCE; MULTILAYER; PRESSURE; REGIONS;

D O I：

10.1088/1361-6463/aa9941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Differences in the physical and chemical properties of Al2O3 films on a Si wafer and a CxHy layer were investigated in the case of plasma-enhanced atomic layer deposition. The Al2O3 film on the Si had a sharper interface and lower thickness than the Al2O3 film on the CxHy. The amount of carbon-impurity near the interface was larger for Al2O3 on the CxHy than for Al2O3 on the Si. In order to understand these differences, the concentrations of Al, O, C, and Si atoms through the Al2O3 films were evaluated by using x-ray photoelectron spectroscopy (XPS) depth profiling. The emission intensities of CO molecule were analyzed for different numbers of deposition cycles, by using time-resolved optical emission spectroscopy (OES). Finally, a growth mechanism for Al2O3 on an organic layer was proposed, based on the XPS and OES results for the Si wafer and the CxHy layer.

引用

页数：9

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