Influence of grain size on the electrical properties of Sb2Te3 polycrystalline films

被引：13

作者：

Arun, P ^{[1
]}

Vedeshwar, AG ^{[1
]}

机构：

[1] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India

来源：

MATERIALS RESEARCH BULLETIN | 2003年 / 38卷 / 15期

关键词：

thin films; chalcogenides; layered compounds; vapor deposition; X-ray diffraction;

D O I：

10.1016/j.materresbull.2003.09.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Resistance of vacuum deposited Sb2Te3 films of thickness between 100 and 500 nm has been measured in vacuum. It is found that the resistance of the polycrystalline films strongly depends on the grain size and inter-granular voids. The charge carriers are shown to cross this high resistivity inter-granular void by ohmic conduction. The barrier height as well as temperature coefficient of resistance (TCR) are also shown to depend on the grain size and inter-grain voids. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1929 / 1938

页数：10

共 22 条

[1] Large grain size dependence of resistance of polycrystalline films [J].