A Current-Dependent Switching Strategy for Si/SiC Hybrid Switch-Based Power Converters

被引：64

作者：

He, Jiangbiao ^{[1
]}

Katebi, Ramin ^{[1
]}

Weise, Nathan ^{[1
]}

机构：

[1] Marquette Univ, Dept Elect & Comp Engn, Milwaukee, WI 53233 USA

来源：

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 2017年 / 64卷 / 10期

关键词：

Current-dependent; hybrid switches; silicon carbide (SiC); switching strategy; zero-voltage switching (ZVS); PARALLEL; MOSFET;

D O I：

10.1109/TIE.2017.2708033

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Hybrid switches configured by paralleling Silicon (Si) Insulated Gate Bipolar Transistors (IGBT) and Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors (MOSFET) have been verified to be a high-efficiency cost-effective device concept. In this paper, a current-dependent switching strategy is introduced and implemented to further improve the performance of Si/SiC hybrid switches. This proposed switching strategy is based on a comprehensive consideration of reducing device losses, reliable operation, and overload capability. Based on the utilization of such Si/SiC hybrid switches and the proposed switching strategy, a 15-kW single-phase H-bridge inverter prototype was implemented and tested in the laboratory. Simulation and experimental results are given to verify the performance of the hybrid switches and the new switching strategy.

引用

页码：8344 / 8352

页数：9

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