Effect of Dressing Load and Speed on Removal Rate in the Chemical Mechanical Polishing Process

被引：0
作者：
Tsai, M. Y. [1 ]
Chen, W. K. [1 ]
Tsai, H. J. [2 ]
机构：
[1] Natl Chin Yi Univ Technol, Dept Mech Engn, 1,Sec 4,Roosevelt Rd, Taipei 106, Taiwan
[2] WuFeng Univ, Dept Engn Mech, Minhsiung 62153, Chiayi Cty, Taiwan
来源：
RECENT TRENDS IN MATERIALS AND MECHANICAL ENGINEERING MATERIALS, MECHATRONICS AND AUTOMATION, PTS 1-3 | 2011年 / 55-57卷
关键词：
chemical mechanical polishing; polishing pad; diamond conditioner; PAD;
D O I：
10.4028/www.scientific.net/AMM.55-57.832
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
A pad conditioner or diamond disk is needed to regenerate the asperity structure of the pad and recover its designated role in the chemical mechanical polishing process. In this paper, the effect of dressing load and speed on removal rate of oxidized wafers were investigated using a polycrystalline diamond disk and brazed diamond disk. It was found that polycrystalline diamond disk enable the manufacturer to tightly control diamond leveling and the cutter's shape by comparison with a brazed diamond disk that contains discrete diamond grits of random orientation. Experimental results revealed that for polycrystalline diamond disk, the removal rate of oxidized wafer displayed an almost unchanged curve when the load was less than 4kg, but the removal rate of oxidized wafer for brazed diamond disk initially increased with the dressing load, reaching a maximum value at a dressing load of approximately 4 kg. Then, it decreased slowly with further increases of the dressing load. The removal rate of oxidized wafer remains unchanged with dressing speed.
引用
收藏
页码：832 / +
页数：2
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