Large-area high quality PtSe2 thin film with versatile polarity

被引：70
作者：
Jiang, Wei [1 ,2 ]
Wang, Xudong [1 ]
Chen, Yan [1 ,2 ]
Wu, Guangjian [1 ]
Ba, Kun [3 ,4 ]
Xuan, Ningning [3 ,4 ]
Sun, Yangye [3 ,4 ]
Gong, Peng [3 ,4 ]
Bao, Jingxian [5 ]
Shen, Hong [1 ]
Lin, Tie [1 ]
Meng, Xiangjian [1 ]
Wang, Jianlu [1 ]
Sun, Zhengzong [3 ,4 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China
[2] Univ Chinese Acad Sci, Beijing, Peoples R China
[3] Fudan Univ, Dept Chem, 220 Handan Rd, Shanghai 200433, Peoples R China
[4] Fudan Univ, Shanghai Key Lab Mol Catalysis & Innovat Mat, 220 Handan Rd, Shanghai 200433, Peoples R China
[5] Shanghai Univ, Dept Chem, Shanghai, Peoples R China
来源：
INFOMAT | 2019年 / 1卷 / 02期
基金：
中国国家自然科学基金;
关键词：
2D materials; large-area; platinum diselenide; polarity; GROWTH; PHOTORESPONSE; NANOSHEETS; DEVICES; DRIVEN; LAYERS;
D O I：
10.1002/inf2.12013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Two-dimensional (2D) materials have attracted increasing attention for their outstanding structural and electrical properties. However, for mass-production of field effect transistors (FETs) and potential applications in integrated circuits, large-area and uniform 2D thin films with high mobility, large on-off ratio, and desired polarity are needed to synthesize firstly. Here, a transfer-free growth method for platinum diselenide (PtSe2) films has been developed. The PtSe2 films have been synthesized with various thicknesses in centimeter-sized scale. Typical FET made from a few layer PtSe2 show p-type unipolar, with a high field-effect hole mobility of 6.2 cm(2) V-1 s(-1) and an on-off ratio of 5x10(3). The versatile semimetal-unipolar-ambipolar transition in synthesized PtSe2 films is also firstly observed as the thickness thinning. This work realizes the large-scale preparation of PtSe2 with prominent electrical properties and provides a new strategy for polarity's modulation.
引用
收藏
页码：260 / 267
页数：8
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