Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs

被引：60

作者：

Uhnevionak, Viktoryia ^{[1
]}

Burenkov, Alexander ^{[1
]}

Strenger, Christian ^{[1
]}

Ortiz, Guillermo ^{[2
]}

Bedel-Pereira, Elena ^{[2
]}

Mortet, Vincent ^{[3
]}

Cristiano, Fuccio ^{[2
]}

Bauer, Anton J. ^{[1
]}

Pichler, Peter ^{[1
]}

机构：

[1] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany

[2] Ctr Natl Rech Sci, Lab Anal & Architecture Syst, F-31031 Toulouse, France

[3] Acad Sci Czech Republic, Prague 11720, Czech Republic

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 08期

关键词：

Electron mobility; Hall effect; scattering mechanisms; SiC MOSFET; HALL FACTOR; INTERFACE; TEMPERATURE; MOBILITY; DEPENDENCE; MODELS;

D O I：

10.1109/TED.2015.2447216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of doping concentration and temperature upon the transport properties in the channel of lateral n-channel SiC MOSFETs have been studied using current-voltage and Hall-effect measurements. To interpret the electrical measurements, numerical TCAD simulations have been performed. A simulation methodology that includes the calculation of the Hall factor in the channel of SiC MOSFETs has been developed and applied. In addition, a new model for the bulk mobility has been suggested to explain the temperature dependence of the MOSFET characteristics with different background doping concentrations. Based on the good agreement between the simulated and the measured results, scattering mechanisms in the channel of SiC MOSFETs have been studied.

引用

页码：2562 / 2570

页数：9

共 23 条

[1]

[Anonymous], 2010, SENT DEV US GUID

[2] The origination and optimization of Si/SiO2 interface roughness and its effect on CMOS performance [J].

Chen, YN ;

Myricks, R ;

Decker, M ;

Liu, J ;

Higashi, GS .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (05) :295-297

[3] The mechanism of defect creation and passivation at the SiC/SiO2 interface [J].

Deak, Peter ;

Knaup, Jan M. ;

Hornos, Tamas ;

Thill, Christoph ;

Gali, Adam ;

Frauenheim, Thomas .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (20) :6242-6253

[4] Inversion layer carrier concentration and mobility in 4H-SiC metal-oxide-semiconductor field-effect transistors [J].

Dhar, S. ;

Haney, S. ;

Cheng, L. ;

Ryu, S. -R. ;

Agarwal, A. K. ;

Yu, L. C. ;

Cheung, K. P. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (05)

[5] Effects of nitridation in gate oxides grown on 4H-SiC [J].

Jamet, P ;

Dimitrijev, S ;

Tanner, P .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (10) :5058-5063

[6] N2O processing improves the 4H-SiC:SiO2 interface [J].

Lipkin, LA ;

Das, MK ;

Palmour, JW .

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :985-988

[7] Effect of process variations and ambient temperature on electron mobility at the SiO2/4H-SiC interface [J].

Lu, CY ;

Cooper, JA ;

Tsuji, T ;

Chung, G ;

Williams, JR ;

McDonald, K ;

Feldman, LC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (07) :1582-1588

[8] Challenges in SiC power MOSFET design [J].

Matocha, Kevin .

SOLID-STATE ELECTRONICS, 2008, 52 (10) :1631-1635

[9] Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect [J].

Ortiz, G. ;

Strenger, C. ;

Uhnevionak, V. ;

Burenkov, A. ;

Bauer, A. J. ;

Pichler, P. ;

Cristiano, F. ;

Bedel-Pereira, E. ;

Mortet, V. .

APPLIED PHYSICS LETTERS, 2015, 106 (06)

[10] Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors [J].

Perez-Tomas, A. ;

Brosselard, P. ;

Godignon, P. ;

Millan, J. ;

Mestres, N. ;

Jennings, M. R. ;

Covington, J. A. ;

Mawby, P. A. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (11)

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