Role of irradiation-induced defects on SiC dissolution in hot water

被引：30
作者：
Kondo, Sosuke [1 ]
Mouri, Shinichiro [1 ]
Hyodo, Yoshihiro [2 ]
Hinoki, Tatsuya [1 ]
Kano, Fumihisa [2 ]
机构：
[1] Kyoto Univ, Inst Adv Energy, Uji, Kyoto 6110011, Japan
[2] Toshiba Co Ltd, Power & Ind Syst Res & Dev Ctr, Yokohama, Kanagawa 2358523, Japan
来源：
CORROSION SCIENCE | 2016年 / 112卷
关键词：
Ceramic; SEM; Ion implantation; High temperature corrosion; Reactor conditions; IMPLANTED SILICON-CARBIDE; ELECTRON-SPIN-RESONANCE; HYDROTHERMAL CORROSION; FORCE MICROSCOPY; SEMICONDUCTORS; TEMPERATURE; BEHAVIOR;
D O I：
10.1016/j.corsci.2016.08.007
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An enhancement of the dissolution of high-purity 3C-SiC in hot water (320 degrees C, 20 MPa: relevant to the light-water reactor coolant condition) is demonstrated after 5.1 MeV Si-ion irradiation. Optical spectrometry and Kelvin force microscopy revealed the creation of interband-defect localized states within the bandgap. The dissolution rate was found to be dependent on the irradiation fluence, irradiation-induced volume expansion, and the photoluminescence quenching. An annealing study showed prevention of irradiation-enhanced dissolution with the recovery of most defects. These results show that the dissolution rates of irradiated SiC are increased with the population of irradiation-induced defects. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：402 / 407
页数：6
相关论文
共 35 条
  • [11] ELECTRON-SPIN RESONANCE IN ELECTRON-IRRADIATED 3C-SIC
    ITOH, H
    HAYAKAWA, N
    NASHIYAMA, I
    SAKUMA, E
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) : 4529 - 4531
  • [12] Positron annihilation studies of defects in 3C-SiC hot-implanted with nitrogen and aluminum ions
    Itoh, H
    Uedono, A
    Ohshima, T
    Aoki, Y
    Yoshikawa, M
    Nashiyama, I
    Tanigawa, S
    Okumura, H
    Yoshida, S
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1997, 65 (03): : 315 - 323
  • [13] ELECTRON-SPIN-RESONANCE STUDY OF DEFECTS IN CVD-GROWN 3C-SIC IRRADIATED WITH 2MEV PROTONS
    ITOH, H
    YOSHIKAWA, M
    NASHIYAMA, I
    MISAWA, S
    OKUMURA, H
    YOSHIDA, S
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (07) : 707 - 710
  • [14] Microstructural development in cubic silicon carbide during irradiation at elevated temperatures
    Katoh, Y.
    Hashimoto, N.
    Kondo, S.
    Snead, L. L.
    Kohyama, A.
    [J]. JOURNAL OF NUCLEAR MATERIALS, 2006, 351 (1-3) : 228 - 240
  • [15] The influences of irradiation temperature and helium production on the dimensional stability of silicon carbide
    Katoh, Y
    Kishimoto, H
    Kohyama, A
    [J]. JOURNAL OF NUCLEAR MATERIALS, 2002, 307 : 1221 - 1226
  • [16] A new Multiple Beams-Material Interaction Research Facility for radiation damage studies in fusion materials
    Kohyama, A
    Katoh, Y
    Ando, M
    Jimbo, K
    [J]. FUSION ENGINEERING AND DESIGN, 2000, 51-52 : 789 - 795
  • [17] Microstructural defects in SiC neutron irradiated at very high temperatures
    Kondo, S.
    Katoh, Y.
    Snead, L. L.
    [J]. JOURNAL OF NUCLEAR MATERIALS, 2008, 382 (2-3) : 160 - 169
  • [18] Effect of irradiation damage on hydrothermal corrosion of SiC
    Kondo, Sosuke
    Lee, Moonhee
    Hinoki, Tatsuya
    Hyodo, Yoshihiro
    Kano, Fumihisa
    [J]. JOURNAL OF NUCLEAR MATERIALS, 2015, 464 : 36 - 42
  • [19] Analysis of grain boundary sinks and interstitial diffusion in neutron-irradiated SiC
    Kondo, Sosuke
    Katoh, Yutai
    Snead, Lance L.
    [J]. PHYSICAL REVIEW B, 2011, 83 (07):
  • [20] ROLE OF ENERGY-LEVELS IN SEMICONDUCTOR-ELECTROLYTE SOLAR-CELLS
    MEMMING, R
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (01) : 117 - 123
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