High power nitride laser diodes grown by plasma assisted molecular beam epitaxy

被引：10

作者：

Muziol, G. ^{[1
]}

Siekacz, M. ^{[1
,2
]}

Turski, H. ^{[1
]}

Wolny, P. ^{[1
]}

Grzanka, S. ^{[1
,2
]}

Grzanka, E. ^{[1
,2
]}

Feduniewicz-Zmuda, A. ^{[1
]}

Borysiuk, J. ^{[3
,4
]}

Sobczak, K. ^{[3
]}

Domagala, J. ^{[3
]}

Nowakowska-Siwinska, A. ^{[2
]}

Makarowa, I. ^{[2
]}

Perlin, P. ^{[1
,2
]}

Skierbiszewski, C. ^{[1
,2
]}

机构：

[1] Inst High Pressure Phys, PL-01142 Warsaw, Poland

[2] TopGaN Ltd, PL-01142 Warsaw, Poland

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[4] Univ Warsaw, Fac Phys, PL-02093 Warsaw, Poland

来源：

JOURNAL OF CRYSTAL GROWTH | 2015年 / 425卷

关键词：

Molecular beam epitaxy; Nitrides; Laser diodes;

D O I：

10.1016/j.jcrysgro.2015.02.067

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The influence of waveguide design on performance of nitride based laser diodes (LDs) grown by plasma assisted molecular beam epitaxy is studied. A large improvement in threshold current density and slope efficiency of LDs is observed when an InGaN interlayer with 8% In content is introduced between multi-quantum-well region and electron blocking layer. This dependence is attributed to reduction of internal losses due to lower optical mode overlap with highly absorptive Mg-doped layers. This led to demonstration of blue LD operating at lambda=450 nm with high optical power of 500 mW per facet. (C) 2015 Elsevier B.V. All rights reserved

引用

页码：398 / 400

页数：3

共 50 条

[1] Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy
Skierbiszewski, C.
Turski, H.
Muziol, G.
Siekacz, M.
Sawicka, M.
Cywinski, G.
Wasilewski, Z. R.
Porowski, S.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (07)
[2] InAlGaN LASER DIODES GROWN BY PLASMA ASSISTED MOLECULAR BEAM EPITAXY
Skierbiszewski, C.
Siekacz, M.
Turski, H.
Sawicka, M.
Feduniewicz-Zmuda, A.
Perlin, P.
Suski, T.
Wasilewski, Z.
Grzegory, I.
Porowski, S.
LITHUANIAN JOURNAL OF PHYSICS, 2011, 51 (04): : 276 - 282
[3] True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy
Skierbiszewski, Czeslaw
Siekacz, Marcin
Turski, Henryk
Muziol, Grzegorz
Sawicka, Marta
Wolny, Pawel
Cywinski, Grzegorz
Marona, Lucja
Perlin, Piotr
Wisniewski, Przemyslaw
Albrecht, Martin
Wasilewski, Zbigniew R.
Porowski, Sylwester
APPLIED PHYSICS EXPRESS, 2012, 5 (11)
[4] Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy
Muziol, G.
Siekacz, M.
Nowakowski-Szkudlarek, K.
Hajdel, M.
Smalc-Koziorowska, J.
Feduniewicz-Zmuda, A.
Grzanka, E.
Wolny, P.
Turski, H.
Wisniewski, P.
Perlin, P.
Skierbiszewski, C.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 91 : 387 - 391
[5] Laser diodes grown on porous GaN by plasma-assisted molecular beam epitaxy
Fiuczek, Natalia
Hajdel, Mateusz
Kafar, Anna
Muziol, Grzegorz
Siekacz, Marcin
Feduniewicz-Zmuda, Anna
Golyga, Oliwia
Skierbiszewski, Czeslaw
Sawicka, Marta
OPTICAL MATERIALS EXPRESS, 2023, 13 (05) : 1201 - 1210
[6] Tunnel junctions for two-color nitride light emitting diodes and laser diodes grown by plasma assisted molecular beam epitaxy
Skierbiszewski, C.
Turski, H.
Zak, M.
Nowakowski-Szkudlarek, K.
Muziol, G.
Siekacz, M.
Feduniewicz-Zmuda, A.
Sawicka, M.
2018 76TH DEVICE RESEARCH CONFERENCE (DRC), 2018,
[7] Degradation of III-nitride laser diodes grown by molecular beam epitaxy
Xiu, H.
Thrush, E. J.
Kauer, M.
Smeeton, T. M.
Hooper, S. E.
Heffernan, J.
Humphreys, C. J.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 2204 - +
[8] High power blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy
Skierbiszewski, C
Perlin, P
Grzegory, I
Wasilewski, ZR
Siekacz, M
Feduniewicz, A
Wisniewski, P
Borysiuk, J
Prystawko, P
Kamler, G
Suski, T
Porowski, S
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (08) : 809 - 813
[9] CWGaN laser diodes grown by molecular beam epitaxy
Hitz, B
PHOTONICS SPECTRA, 2005, 39 (09) : 26 - 27
[10] InGaN laser diodes grown by molecular beam epitaxy
Burgess, DS
PHOTONICS SPECTRA, 2005, 39 (03) : 24 - +

← 1 2 3 4 5 →