On the temperature dependence of the refractive index of a uniaxial crystal semiconductor

被引：0

作者：

Dubovik, VM ^{[1
]}

Ryazanov, MI ^{[1
]}

机构：

[1] Moscow State Engn Phys Inst, Moscow 115409, Russia

来源：

LASER PHYSICS | 2001年 / 11卷 / 09期

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D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We determine the temperature dependence for the lattice part of the refractive index n of a semiconductor, associated with orientation fluctuations of the axes of molecules in this semiconductor. The contribution of conduction electrons of intrinsic semiconductor to the temperature dependence of its refractive index is investigated. We estimate the temperature above which the refractive index is determined by the contribution of conduction electrons and below which this index is determined by the contribution of the lattice.

引用

页码：1037 / 1041

页数：5