MOSFETs on (110) C-H Diamond: ALD Al2O3/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

被引：27
|
作者：
Liu, Benjian [1 ,2 ]
Bi, Te [1 ]
Fu, Yu [1 ]
Kudara, Ken [1 ]
Imanishi, Shoichiro [1 ]
Liu, Kang [2 ]
Dai, Bing [2 ]
Zhu, Jiaqi [2 ]
Kawarada, Hiroshi [1 ]
机构：
[1] Waseda Univ, Fac Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan
[2] Harbin Inst Technol, Natl Key Lab Sci & Technol Adv Composites Special, Harbin 150080, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 03期
关键词：
Atomic layer deposition (ALD) Al2O3; conduction mechanism; diamond; FET; normally-OFF; POWER-DENSITY; CASCODE; AL2O3; FET;
D O I：
10.1109/TED.2022.3147152
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hole concentration of 2-D hole gas (2DHG) on (110) diamond is higher than that on other faces, making it the best choice for power device application. Detailed analysis of atomic layer deposition (ALD) Al2O3/(110) C-H diamond interface structure is of vital importance. MOSFETs with thin (10 nm) and thick (100 nm) ALD Al2O3 layer were made in this study. The microstructure of Al2O3 on (110) C-H diamond was analyzed. Abrupt interface of ALD Al2O3/C-H diamond was observed through high resolution transmission electron microscope (HRTEM). Cascode structure using diamond MOSFETs and enhancement mode silicon MOSFET is fabricated and its high performance is confirmed.
引用
收藏
页码：949 / 955
页数：7
相关论文
共 48 条
  • [41] Performance of hydrogen-terminated diamond MOSFET with LaB6/Al2O3 bilayer dielectric
    He, Shi
    Wang, Yan-Feng
    Chen, Genqiang
    Zhang, Minghui
    Wang, Wei
    Chang, Xiaohui
    Li, Qi
    Zhang, Qianwen
    Zhu, Tianfei
    Wang, Hong-Xing
    DIAMOND AND RELATED MATERIALS, 2021, 120
  • [42] 145-MW/cm2 Heteroepitaxial Diamond MOSFETs With NO2 p-Type Doping and an Al2O3 Passivation Layer
    Saha, Niloy Chandra
    Oishi, Toshiyuki
    Kim, Seongwoo
    Kawamata, Yuki
    Koyama, Koji
    Kasu, Makoto
    IEEE ELECTRON DEVICE LETTERS, 2020, 41 (07) : 1066 - 1069
  • [43] Electrical Characterization of Metal/Al2O3/SiO2/Oxidized-Si-Terminated (C-Si-O) Diamond Capacitors
    Fu, Yu
    Kono, Shozo
    Kawarada, Hiroshi
    Hiraiwa, Atsushi
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (07) : 3604 - 3610
  • [44] Transport Properties of the Two-Dimensional Hole Gas for H-Terminated Diamond with an Al2O3 Passivation Layer
    Yu, Cui
    Zhou, Chuangjie
    Guo, Jianchao
    He, Zezhao
    Ma, Mengyu
    Wang, Hongxing
    Bu, Aimin
    Feng, Zhihong
    CRYSTALS, 2022, 12 (03)
  • [45] Improvement of Electron Transport Property and ON-Resistance in Normally-OFF Al2O3/AlGaN/GaN MOS-HEMTs Using Post-Etch Surface Treatment
    Zhu, Jiejie
    Jing, Siqi
    Ma, Xiaohua
    Liu, Siyu
    Wang, Pengfei
    Zhang, Yingcong
    Zhu, Qing
    Mi, Minhan
    Hou, Bin
    Yang, Ling
    Kuball, Martin
    Hao, Yue
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (09) : 3541 - 3547
  • [46] 0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique
    Hou, Bin
    Ma, Xiaohua
    Zhu, Jiejie
    Yang, Ling
    Chen, Weiwei
    Mi, Minhan
    Zhu, Qing
    Chen, Lixiang
    Zhang, Rong
    Zhang, Meng
    Zhou, Xiaowei
    Hao, Yue
    IEEE ELECTRON DEVICE LETTERS, 2018, 39 (03) : 397 - 400
  • [47] High Voltage Stress Induced in Transparent Polycrystalline Diamond Field-Effect Transistor and Enhanced Endurance Using Thick Al2O3 Passivation Layer
    Syamsul, Mohd
    Kitabayashi, Yuya
    Kudo, Takuya
    Matsumura, Daisuke
    Kawarada, Hiroshi
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (05) : 607 - 610
  • [48] Characteristics of Al2O3/diamond/c-BN/SiC grain steel brazing joints using Cu-Sn-Ti active filler powder alloys
    Liu, Sixing
    Xiao, Bing
    Xiao, Haozhong
    Meng, Longhui
    Zhang, Ziyu
    Wu, Hengheng
    SURFACE & COATINGS TECHNOLOGY, 2016, 286 : 376 - 382
12345