Operation of NO2 Gas Sensors based on Pd-AlGaN/GaN HEMT up to 500 °C

被引：3

作者：

Van Cuong Nguyen ^{[1
]}

Cha, Ho-young ^{[1
]}

Kim, Hyungtak ^{[1
]}

机构：

[1] Hongik Univ, Sch Elect & Elect Engn, Seoul 04066, South Korea

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2021年 / 21卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

Palladium; gallium nitride; nitrogen dioxide sensor; high electron mobility transistor; extreme temperature; SENSITIVITY; ADSORPTION;

D O I：

10.5573/JSTS.2021.21.6.412

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the performance of NO2 gas sensors based on AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures up to 500 degrees C. A 30-nm Pd catalyst layer as the gate of the transistor sensor was deposited by e-beam evaporator for NO2 sensing. At 500 degrees C, the sensor showed high sensitivity (8.1%), fast response (6 s) and recovery times (7 s) under 1 ppm NO2, thereby proving to be a great candidate for semiconductor sensors under extreme conditions.

引用

页码：412 / 417

页数：6

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