Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt

被引：115

作者：

Shuai, Yao ^{[1
]}

Zhou, Shengqiang ^{[1
,2
]}

Buerger, Danilo ^{[1
]}

Helm, Manfred ^{[1
]}

Schmidt, Heidemarie ^{[1
]}

机构：

[1] HZDR, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

[2] Peking Univ, State Key Lab Nucl Phys & Technol, Sch Phys, Beijing 100871, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 12期

关键词：

CURRENT-VOLTAGE CHARACTERISTICS; BIFEO3; FILMS; TRANSITION; INTERFACE; MECHANISM; OXIDES;

D O I：

10.1063/1.3601113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the external voltage, the Au/BiFeO3/Pt is switched between two stable resistance states without an electroforming process. The resistance ratio is larger than two orders of magnitude. The resistive switching is understood by the electric field-induced carrier trapping and detrapping, which changes the depletion layer thickness at the Au/BiFeO3 interface. (C) 2011 American Institute of Physics. [doi:10.1063/1.3601113]

引用

页数：4

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