Peculiarities of Linear Thermal Expansion of CuInS2 Single Crystals

被引:4
作者
Nagaoka, Akira [1 ]
Yoshino, Kenji [1 ]
Taniyama, Tomoyasu [2 ]
Miyake, Hideto [3 ]
机构
[1] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 892192, Japan
[2] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan
[3] Mie Univ, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan
关键词
ANOMALOUS TEMPERATURE-DEPENDENCE; TRAVELING HEATER METHOD; CHALCOPYRITE SEMICONDUCTORS; ENERGY-GAP; GROWTH; AGGASE2; PHOTOREFLECTANCE;
D O I
10.1143/JJAP.50.05FB04
中图分类号
O59 [应用物理学];
学科分类号
摘要
CuInS2 single crystals were grown by a traveling heater method, which is one of the solution growth techniques. The temperature dependence of the X-ray diffraction of CuInS2 was determined between 10 and 300 K. The lattice constant of the a-axis decreased and that of the c-axis increased with increasing temperature. The linear thermal expansion of the c-axis calculated from the lattice constants decreased from 10 to 100 K. (C) 2011 The Japan Society of Applied Physics
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页数:2
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