A physics based analytical solution to undoped cylindrical surrounding-gate (SRG) MOSFETs

被引：0
|
作者：
He, J [1 ]
Chan, MS [1 ]
机构：
[1] Univ Calif Berkeley, Dept EECS, Berkeley, CA 94720 USA
来源：
ICCDCS 2004: Fifth International Caracas Conference on Devices, Circuits and Systems | 2004年
关键词：
MOSFETs; non-classical CMOS; cylindrical; surrounding-gate; device physics; and compact modeling;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A physics based analytical solution to undoped cylindrical Surrounding-Gate (SRG) MOSFETs is derived in this paper by solving the Poisson-Boltzmann equation. The solution produces a closed form solution for the energy band bending. Based on the solution, the exact inversion charge density can be directly expressed as a function of the quasi-Fermi potential, gate voltage and device structure geometries. The accurate Physics included in the analytical solution can be used to predict the performance of surrounding-gate MOSFETs under unconventional operation conditions such as volume inversion effect due to silicon body diameter and structure dependent effective oxide thickness effects that are unique in a SRG MOSFET.
引用
收藏
页码：26 / 28
页数：3
相关论文
共 50 条
  • [21] New analytical threshold voltage model for halo-doped cylindrical surrounding-gate MOSFETs
    李聪
    庄奕琪
    韩茹
    半导体学报, 2011, 32 (07) : 20 - 27
  • [22] ANALYTICAL MODEL OF THE SUBTHRESHOLD BEHAVIOR IN SHORT-CHANNEL JUNCTIONLESS CYLINDRICAL SURROUNDING-GATE MOSFETS
    Zhang, Baili
    Lou, Haijun
    Li, Dan
    Lin, Xinnan
    Chan, Mansun
    2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
  • [23] An Analytical Threshold Voltage Model of Strained Surrounding-gate MOSFETs
    Liu, Yao
    Li, Zunchao
    2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012), 2012, : 25 - 27
  • [24] Analytical and Numerical Study of the Impact of Halos on Surrounding-Gate MOSFETs
    Li, Zunchao
    Zhang, Ruizhi
    Liang, Feng
    Yang, Zhiyong
    IEICE TRANSACTIONS ON ELECTRONICS, 2009, E92C (04): : 558 - 563
  • [25] Cylindrical surrounding-gate MOSFETs with electrically induced source/drain extension
    Li, Cong
    Zhuang, Yiqi
    Han, Ru
    MICROELECTRONICS JOURNAL, 2011, 42 (02) : 341 - 346
  • [26] A Charge-Based Compact Model for Arbitrary Doped Cylindrical Surrounding-Gate MOSFETs
    Liu, Feilong
    Zhang, Jian
    He, Frank
    Liu, Feng
    Zhang, Lining
    Chan, Mansun
    EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, 2008, : 89 - +
  • [27] An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs
    Alkoash, Abedalkhem
    Sasic, Rajko M.
    Ostojic, Stanko M.
    Lukic, Petar M.
    JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2011, 8 (01) : 47 - 50
  • [28] Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs
    Jiang, Chunsheng
    Liang, Renrong
    Wang, Jing
    Xu, Jun
    PHYSICAL SCIENCES REVIEWS, 2018, 3 (03)
  • [29] The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs
    Sasic, R. M.
    Lukic, P. M.
    Ostojic, S. M.
    Alkoash, A.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2010, 12 (05): : 1161 - 1164
  • [30] A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs
    He Jin
    Zhang Jian
    Zhang Lining
    Ma Chenyue
    Chan Mansun
    JOURNAL OF SEMICONDUCTORS, 2009, 30 (02)
12345