A physics based analytical solution to undoped cylindrical surrounding-gate (SRG) MOSFETs

被引：0
|
作者：
He, J [1 ]
Chan, MS [1 ]
机构：
[1] Univ Calif Berkeley, Dept EECS, Berkeley, CA 94720 USA
来源：
ICCDCS 2004: Fifth International Caracas Conference on Devices, Circuits and Systems | 2004年
关键词：
MOSFETs; non-classical CMOS; cylindrical; surrounding-gate; device physics; and compact modeling;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A physics based analytical solution to undoped cylindrical Surrounding-Gate (SRG) MOSFETs is derived in this paper by solving the Poisson-Boltzmann equation. The solution produces a closed form solution for the energy band bending. Based on the solution, the exact inversion charge density can be directly expressed as a function of the quasi-Fermi potential, gate voltage and device structure geometries. The accurate Physics included in the analytical solution can be used to predict the performance of surrounding-gate MOSFETs under unconventional operation conditions such as volume inversion effect due to silicon body diameter and structure dependent effective oxide thickness effects that are unique in a SRG MOSFET.
引用
收藏
页码：26 / 28
页数：3
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