CdTe/CZT under high flux irradiation

被引：34

作者：

Strassburg, Matthias ^{[1
]}

Schroeter, Christian ^{[1
]}

Hackenschmied, Peter ^{[1
]}

机构：

[1] Siemens AG, Healthcare Sector, D-91301 Forchheim, Germany

来源：

JOURNAL OF INSTRUMENTATION | 2011年 / 6卷

关键词：

Solid state detectors; X-ray detectors; Materials for solid-state detectors; Computerized Tomography (CT) and Computed Radiography (CR); X-RAY; TRANSPORT-PROPERTIES; CHARGE-TRANSPORT; ELECTRON; DETECTORS; POLARIZATION; MOBILITY; ARRAYS;

D O I：

10.1088/1748-0221/6/01/C01055

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Direct converting quantum counting detectors based on cadmium telluride and cadmium zinc telluride have been investigated with respect to their properties under intense X-ray irradiation. To derive a detailed picture of the performance of such detectors, the influence of the electric field, the detector thickness, the temperature and the intensity of the X-ray irradiation was studied. The results are discussed in terms of the "polarization" phenomenon, a reduction of the electric field strength inside the detector due to immobile charge carriers accumulating during irradiation. Furthermore, the impact of Te-inclusions and -precipitates is presented.

引用

页数：11

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