Stark effect in single and vertically coupled InAs/GaAs self-assembled quantum dots

被引：11

作者：

Sobolev, MM ^{[1
]}

Ustinov, VM ^{[1
]}

Cirlin, GE ^{[1
]}

机构：

[1] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

PHYSICA B-CONDENSED MATTER | 2003年 / 340卷

关键词：

GaAs; quantum dot; defects; stark effect;

D O I：

10.1016/j.physb.2003.09.178

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Hole emission from single and vertically coupled quantum dots (SQD and VCQD) in InAs/GaAs p-n heterostructures under varied reverse bias and the influence exerted on this process by the Coulomb interaction between the quantum dots and point defects situated near the dots has been studied by capacitance-voltage (C-V) and deep-level transient spectroscopes. Levels of the ground and excited states of the VCQD have been revealed. The electric-field-induced shift of the energy levels of these states is attributed to the quantum-confined Stark effect for SQD and VCQD. The Stark effect in the VCQD structure is stronger than that in the SQD. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：1103 / 1107

页数：5

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