Stark effect in single and vertically coupled InAs/GaAs self-assembled quantum dots

被引：11
|
作者：
Sobolev, MM [1 ]
Ustinov, VM [1 ]
Cirlin, GE [1 ]
机构：
[1] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
PHYSICA B-CONDENSED MATTER | 2003年 / 340卷
关键词：
GaAs; quantum dot; defects; stark effect;
D O I：
10.1016/j.physb.2003.09.178
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Hole emission from single and vertically coupled quantum dots (SQD and VCQD) in InAs/GaAs p-n heterostructures under varied reverse bias and the influence exerted on this process by the Coulomb interaction between the quantum dots and point defects situated near the dots has been studied by capacitance-voltage (C-V) and deep-level transient spectroscopes. Levels of the ground and excited states of the VCQD have been revealed. The electric-field-induced shift of the energy levels of these states is attributed to the quantum-confined Stark effect for SQD and VCQD. The Stark effect in the VCQD structure is stronger than that in the SQD. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：1103 / 1107
页数：5
相关论文
共 50 条
  • [1] Anomalous quantum confined Stark effects in vertically coupled InAs/GaAs self-assembled quantum dots
    Sheng, WD
    Leburton, JP
    COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 513 - 518
  • [2] Stark effect in vertically coupled quantum dots in InAs-GaAs heterostructures
    M. M. Sobolev
    V. M. Ustinov
    A. E. Zhukov
    Yu. G. Musikhin
    N. N. Ledentsov
    Semiconductors, 2002, 36 : 1013 - 1019
  • [3] Stark effect in vertically coupled quantum dots in InAs-GaAs heterostructures
    Sobolev, MM
    Ustinov, VM
    Zhukov, AE
    Musikhin, YG
    Ledentsov, NN
    SEMICONDUCTORS, 2002, 36 (09) : 1013 - 1019
  • [4] Carrier transfer in self-assembled coupled InAs/GaAs quantum dots
    Tarasov, GG
    Mazur, YI
    Zhuchenko, ZY
    Maassdorf, A
    Nickel, D
    Tomm, JW
    Kissel, H
    Walther, C
    Masselink, WT
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (12) : 7162 - 7170
  • [5] Self-Assembled InAs/GaAs Coupled Quantum Dots for Photonic Quantum Technologies
    Jennings, Cameron
    Ma, Xiangyu
    Wickramasinghe, Thushan
    Doty, Matthew
    Scheibner, Michael
    Stinaff, Eric
    Ware, Morgan
    ADVANCED QUANTUM TECHNOLOGIES, 2020, 3 (02)
  • [6] Quantum confined Stark effect and permanent dipole moment of InAs-GaAs self-assembled quantum dots
    Fry, P.W.
    Itskevich, I.E.
    Mowbray, D.J.
    Skolnick, M.S.
    Barker, J.
    O'Reilly, E.P.
    Hopkinson, M.
    Al-Khafaji, M.
    Cullis, A.G.
    Hill, G.
    Clark, J.C.
    Physica Status Solidi (A) Applied Research, 2000, 178 (01): : 269 - 275
  • [7] Quantum confined Stark effect and permanent dipole moment of InAs-GaAs self-assembled quantum dots
    Fry, PW
    Itskevich, IE
    Mowbray, DJ
    Skolnick, MS
    Barker, J
    O'Reilly, EP
    Hopkinson, M
    Al-Khafaji, M
    Cullis, AG
    Hill, G
    Clark, JC
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2000, 178 (01): : 269 - 275
  • [8] Enhanced intraband Stark effects in stacked InAs/GaAs self-assembled quantum dots
    Sheng, WD
    Leburton, JP
    APPLIED PHYSICS LETTERS, 2001, 78 (09) : 1258 - 1260
  • [9] Structural and optical studies of vertically aligned InAs/GaAs self-assembled quantum dots
    Migliorato, MA
    Wilson, LR
    Mowbray, DJ
    Skolnick, MS
    Al-Khafaji, M
    Cullis, AG
    Hopkinson, M
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (12) : 6374 - 6378
  • [10] The stark effect and electron-hole wavefunctions in InAs-GaAs self-assembled quantum dots
    Skolnick, MS
    Fry, PW
    Itskevich, IE
    Mowbray, DJ
    Barker, JA
    O'Reilly, EP
    Hopkinson, M
    Al-Khafaji, M
    Cullis, AG
    Hill, C
    Clark, JC
    OPTICAL PROPERTIES OF SEMICONDUCTOR NANOSTRUCTURES, 2000, 81 : 337 - 346
12345