PULSED LASER DEPOSITION OF SEMICONDUCTING DOUBLE-DOPED BARIUM TITANATE THIN FILMS ON SILICON SUBSTRATES

被引:0
作者
Apostol, Irina [1 ]
Stefan, Nicolaie [1 ]
Birjega, Ruxandra [1 ]
Luculescu, Catalin R. [1 ]
Andrei, Andreea [1 ]
Mihailescu, Ion N. [1 ]
机构
[1] Natl Inst Lasers Plasma & Radiat Phys Bucharest, SC IPEE ATI SA Curtea Arges, Bucharest, Romania
来源
METALURGIA INTERNATIONAL | 2011年 / 16卷 / 04期
关键词
semiconducting doped barium titanate; thin films; pulsed laser deposition; POSITIVE TEMPERATURE-COEFFICIENT;
D O I
暂无
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
Doped BaTiO(3) thin films applications include thin film capacitors, pyroelectric detectors, nonvolatile memories, optical waveguides and semiconducting applications as surface heaters and temperature sensors. We synthesized by pulsed laser deposition (Ba,Sr,))TiO(3) and (Ba,Pb,Y)TiO(3) thin films on silicon substrates. The synthesized thin films were analyzed for: ctystalline structure by X-ray diffractometry, morphology and surface topography by atomic force microscopy, elemental composition by energy dispersive X-ray spectroscopy and electrical properties by electrical measurements. We have shown that thin films properties were determined by the dopants, targets composition, and deposition parameters (oxygen pressure, substrate temperature and number of pulses). All thin films exhibited a semiconducting behavior of NTC type, as proved by the decrease of electrical resistance with heating temperature.
引用
收藏
页码:53 / 56
页数:4
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