An Ultra-broadband Low-Noise Distributed Amplifier in InP DHBT Technology

被引：0

作者：

Shivan, T. ^{[1
]}

Hossaini, M. ^{[1
]}

Stoppel, D. ^{[1
]}

Weimann, N. ^{[2
]}

Schulz, S. ^{[1
]}

Doerner, R. ^{[1
]}

Krozer, V. ^{[1
]}

Heinrich, W. ^{[1
]}

机构：

[1] Leibniz Inst Hochstfrequenztech FBH, Ferdinand Braun Inst, Berlin, Germany

[2] Univ Duisburg Essen, Duisburg, Germany

来源：

2018 13TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2018年

关键词：

distributed amplifier; transferred-substrate; InP DHBT; travelling wave amplifier; low-noise amplifier;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports an ultra-wideband low-noise amplifier in a transferred-substrate InP DHBT technology. The wideband characteristics are obtained by using a distributed topology with cascode unit cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and an f(t)/f(max) of similar to 350/400 GHz respectively. Due to optimum line-impedance matching, low common-base transistor's capacitance, and low collector-current operation, the circuit also exhibits a low noise figure. The measured circuit shows a bandwidth of 40 .. 185 GHz with a noise figure of 8 dB in the frequency range 75 ... 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single stage amplifiers with cascode configuration.

引用

页码：241 / 244

页数：4

共 13 条

[1] MONOLITHIC GAAS TRAVELING-WAVE AMPLIFIER [J].

AYASLI, Y ;

VORHAUS, JL ;

MOZZI, R ;

REYNOLDS, L .

ELECTRONICS LETTERS, 1981, 17 (12) :413-414

[2]

Brown D. F., 2016, 2016 IEEE COMPOUND S, P1

[3] InP DHBT Distributed Amplifiers With Up to 235-GHz Bandwidth [J].

Eriksson, Klas ;

Darwazeh, Izzat ;

Zirath, Herbert .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2015, 63 (04) :1334-1341

[4] A Trimmable Cascaded Distributed Amplifier With 1.6 THz Gain-Bandwidth Product [J].

Fritsche, David ;

Tretter, Gregor ;

Carta, Corrado ;

Ellinger, Frank .

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, 2015, 5 (06) :1094-1096

[5]

Hoffman J., 2015, 2015 IEEE Compound Semiconductor. Integr. Circuit Symp. (CSICS), P1

[6]

Johansen TK, 2017, EUR MICROW INTEGRAT, P240, DOI 10.23919/EuMIC.2017.8230704

[7]

Li Y, 2016, ADV MATER TECHNOL-US, V1, DOI [10.1155/2016/9805675, 10.1002/admt.201600102]

[8] A 50 to 146 GHz Power Amplifier Based on Magnetic Transformers and Distributed Gain Cells [J].

Pahl, Philipp ;

Wagner, Sandrine ;

Massler, Hermann ;

Diebold, Sebastian ;

Leuther, Arnulf ;

Kallfass, Ingmar ;

Zwick, Thomas .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2015, 25 (09) :615-617

[9] A 4-91-GHz traveling-wave amplifier in a standard 0.12-μm SOICMOS microprocessor technology [J].

Plouchart, JO ;

Kim, JH ;

Zamdmer, N ;

Lu, LH ;

Sherony, M ;

Tan, Y ;

Groves, RA ;

Trzcinski, R ;

Talbi, M ;

Ray, A ;

Wagner, LF .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (09) :1455-1461

[10] 170 GHz SiGe-BiCMOS Loss-Compensated Distributed Amplifier [J].

Testa, Paolo Valerio ;

Belfiore, Guido ;

Paulo, Robert ;

Carta, Corrado ;

Ellinger, Frank .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2015, 50 (10) :2228-2238

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