Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

被引：207

作者：

Kinoshita, K. ^{[1
]}

Tsunoda, K. ^{[1
]}

Sato, Y. ^{[1
]}

Noshiro, H. ^{[1
]}

Yagaki, S. ^{[1
]}

Aoki, M. ^{[1
]}

Sugiyama, Y. ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 03期

关键词：

D O I：

10.1063/1.2959065

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dependence of the relationship between the reset current I(reset) and the compliance current I(comp) (I(reset)-I(comp) characteristic) of a Pt/NiO(x)/Pt structure on the parasitic capacitance between the Pt/NiO(x)/Pt structure and a current limiter C was measured for I(comp)< 1 mA. It was clarified that C deviated the I(reset)-I(comp) characteristic from the ideal linear relationship expected for C=0 and I(reset) saturated at higher I(comp) for larger C. This is attributed to a transient current flowing through C when the forming or set transitions occurred. The relationship of I(reset)approximate to I(comp) was maintained down to I(comp)=150 mu A in the 1T1R cell with very small C. (C) 2008 American Institute of Physics.

引用

页数：3

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