Analysis of Carrier Behaviors in Double-layer Organic Devices by Displacement Current Measurement and Electric-field-induced Optical Second-harmonic Generation Measurement

被引：3

作者：

Noma, Taishi ^{[1
]}

Taguchi, Dai ^{[1
]}

Manaka, Takaaki ^{[1
]}

Iwamoto, Mitsumasa ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2015年 / E98C卷 / 02期

基金：

日本学术振兴会;

关键词：

EFISHG; DCM; interfacial charges; electric field; TRANSISTORS;

D O I：

10.1587/transele.E98.C.86

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Displacement current measurement (DCM) is widely used as a method for analyzing carrier behaviors of organic devices. Carrier behaviors are analyzed using transient currents. On the other hand, electricfield-induced optical second-harmonic generation (EFISHG) measurement is capable of directly probing carrier motions in organic devices, where the migration of electric field stemmed from carriers is measured. In this study, we employed the DCM and EFISHG measurements for analyzing interfacial carrier behaviors in Au/pentacene/polyimide (PI)/indium-tin-oxide (ITO) double layer organic devices, where interfacial accumulated charges and electric fields formed in the pentacene layer were explored.

引用

页码：86 / 90

页数：5

共 15 条

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[2]

2-9

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