Key role of the meniscus shape in crystallization of organic semiconductors during meniscus-guided coating

被引:34
作者
Zhang, Ke [1 ]
Wang, Zuyuan [1 ]
Marszalek, Tomasz [1 ,2 ]
Borkowski, Michal [2 ]
Fytas, George [1 ]
Blom, Paul W. M. [1 ]
Pisula, Wojciech [1 ,2 ]
机构
[1] Max Planck Inst Polymer Res, Ackermannweg 10, D-55128 Mainz, Germany
[2] Lodz Univ Technol, Fac Chem, Dept Mol Phys, Zeromskiego 116, PL-90924 Lodz, Poland
关键词
FIELD-EFFECT TRANSISTORS; NUMERICAL-SIMULATION; CRYSTAL ARRAYS; GROWTH; NUCLEATION; ALIGNMENT; NANOPARTICLES; FABRICATION; TRANSPORT; FLOW;
D O I
10.1039/d0mh00141d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Solution processable organic semiconductors (OSCs) hold advantages for the fabrication of flexible and large-area electronic devices. Meniscus-guided coating (MGC) is one promising technique to tune the crystallization and thin film morphology of OSCs. In this work, we demonstrate the crucial role of the meniscus shape in the fluid flow and crystallization of OSCs during MGC. We demonstrate that angle-dependent dip-coating (ADDC) allows precise control of the meniscus shape. The use of a small meniscus angle during ADDC of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) enhances the crystallization and mass deposition of the OSC due to an increased upward fluid flow. The resulting aligned crystalline film with high surface coverage favors the charge carrier transport in C8-BTBT based field-effect transistors. This work provides comprehensive insight into the fundamental mechanism of OSC crystallization during MGC, which is important for the large-area deposition of OSCs for practical electronic applications.
引用
收藏
页码:1631 / 1640
页数:10
相关论文
共 51 条
  • [1] Arfsten NJ, 1997, J SOL-GEL SCI TECHN, V8, P1099, DOI 10.1007/BF02436990
  • [2] Stick-Slip Patterning at Low Capillary Numbers for an Evaporating Colloidal Suspension
    Bodiguel, Hugues
    Doumenc, Frederic
    Guerrier, Beatrice
    [J]. LANGMUIR, 2010, 26 (13) : 10758 - 10763
  • [3] Role of the Meniscus Shape in Large-Area Convective Particle Assembly
    Born, Philip
    Blum, Susanne
    Munoz, Andres
    Kraus, Tobias
    [J]. LANGMUIR, 2011, 27 (14) : 8621 - 8633
  • [4] Full Investigation of Angle Dependence in Dip-Coating Sol-Gel Films
    Bottein, Thomas
    Loizillon, Jerome
    Grosso, David
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2017, 121 (25) : 6220 - 6225
  • [5] A New Dip Coating Method to Obtain Large-Surface Coatings with a Minimum of Solution
    Ceratti, Davide. R.
    Louis, Benjamin
    Paquez, Xavier
    Faustini, Marco
    Grosso, David
    [J]. ADVANCED MATERIALS, 2015, 27 (34) : 4958 - +
  • [6] Scalable Directed Assembly of Highly Crystalline 2,7-Dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) Films
    Chai, Zhimin
    Abbasi, Salman A.
    Busnaina, Ahmed A.
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (21) : 18123 - 18130
  • [7] Controlled Growth of Large-Area High-Performance Small-Molecule Organic Single-Crystalline Transistors by Slot-Die Coating Using A Mixed Solvent System
    Chang, Jingjing
    Chi, Chunyan
    Zhang, Jie
    Wu, Jishan
    [J]. ADVANCED MATERIALS, 2013, 25 (44) : 6442 - 6447
  • [8] Understanding the Meniscus-Guided Coating Parameters in Organic Field-Effect-Transistor Fabrications
    Chen, Ming
    Peng, Boyu
    Huang, Shuyun
    Chan, Paddy Kwok Leung
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2020, 30 (01)
  • [9] General observation of n-type field-effect behaviour in organic semiconductors
    Chua, LL
    Zaumseil, J
    Chang, JF
    Ou, ECW
    Ho, PKH
    Sirringhaus, H
    Friend, RH
    [J]. NATURE, 2005, 434 (7030) : 194 - 199
  • [10] Non-conventional Processing and Post-processing Methods for the Nanostructuring of Conjugated Materials for Organic Electronics
    De Luca, Giovanna
    Pisula, Wojciech
    Credgington, Dan
    Treossi, Emanuele
    Fenwick, Oliver
    Lazzerini, Giovanni Mattia
    Dabirian, Reza
    Orgiu, Emanuele
    Liscio, Andrea
    Palermo, Vincenzo
    Muellen, Klaus
    Cacialli, Franco
    Samori, Paolo
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2011, 21 (07) : 1279 - 1295