Very low energy scanning electron microscopy in nanotechnology

被引:3
作者
Muellerova, Ilona [1 ]
Hovorka, Milos [1 ]
Mika, Filip [1 ]
Mikmekova, Eliska [1 ]
Mikmekova, Sarka [1 ]
Pokorna, Zuzana [1 ]
Frank, Ludek [1 ]
机构
[1] Inst Sci Instruments AS CR, Vvi, Dept Electron Opt, Grp Low Energy Electron Microscopy, CZ-61264 Brno, Czech Republic
关键词
scanning electron microscopy; very low energy electrons; cathode lens; grain contrast; strain contrast; imaging of participates; dopant contrast; very low energy STEM; graphene; CATHODE LENS; CONTRAST; DIFFRACTION; MECHANISM; EMISSION;
D O I
10.1504/IJNT.2012.046749
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The group of low energy electron microscopy at ISI AS CR in Brno has developed a methodology for very low energy scanning electron microscopy at high image resolution by means of an immersion electrostatic lens (the cathode lens) inserted between the illumination column of a conventional scanning electron microscope and the sample. In this way the microscope resolution can be preserved down to a landing energy of the electrons one or even fractions of an electronvolt. In the range of less than several tens of electronvolts the image signal generation processes include contrast mechanisms not met at higher energies, which respond to important features of the 3D inner potential of the target and visualise its local crystallinity as well as the electronic structure. The electron wavelength comparable with interatomic distances allows observation of various wave-optical phenomena in imaging. In addition, the cathode lens assembly secures acquisition of electrons backscattered from the sample at large angles with respect to the surface normal, which are abandoned in standard microscopes although they provide enhanced crystallinity information and surface sensitivity even at medium electron energies. The imaging method is described and illustrated with selected application examples.
引用
收藏
页码:695 / 716
页数:22
相关论文
共 50 条
[21]   Noise coefficients of backscattered electron detectors for low voltage scanning electron microscopy [J].
Hejna, J. .
JOURNAL OF MICROSCOPY, 2013, 252 (01) :35-48
[22]   Software electron counting for low-dose scanning transmission electron microscopy [J].
Mittelberger, Andreas ;
Kramberger, Christian ;
Meyer, Jannik C. .
ULTRAMICROSCOPY, 2018, 188 :1-7
[23]   Resistivity contrast imaging in semiconductor structures using ultra-low energy scanning electron microscopy [J].
Jozwik, Iwona ;
Jagielski, Jacek ;
Dumiszewska, Ewa ;
Kaminski, Maciej ;
Kentsch, Ulrich .
ULTRAMICROSCOPY, 2021, 228
[24]   Towards quantification of doping in gallium arsenide nanostructures by low-energy scanning electron microscopy and conductive atomic force microscopy [J].
Guo, Ran ;
Walther, Thomas .
JOURNAL OF MICROSCOPY, 2024, 293 (03) :160-168
[25]   Noise characteristics of the gas ionization cascade used in low vacuum scanning electron microscopy [J].
Tileli, Vasiliki ;
Knowles, W. Ralph ;
Toth, Milos ;
Thiel, Bradley L. .
JOURNAL OF APPLIED PHYSICS, 2009, 106 (01)
[26]   Low dose scanning transmission electron microscopy of organic crystals by scanning moire fringes [J].
S'ari, Mark ;
Cattle, James ;
Hondow, Nicole ;
Brydson, Rik ;
Brown, Andy .
MICRON, 2019, 120 :1-9
[27]   A Monte Carlo simulation study on the image resolution in scanning electron microscopy [J].
Mao, S. F. ;
Ding, Z. J. .
SURFACE AND INTERFACE ANALYSIS, 2010, 42 (6-7) :1096-1099
[28]   Sensitive Site-Specific Dopant Mapping in Scanning Electron Microscopy on Specimens Prepared by Low Energy Ar+ Ion Milling [J].
Tsurumi, Daisuke ;
Hamada, Kotaro .
APPLIED PHYSICS EXPRESS, 2013, 6 (12)
[29]   Optical STEM detection for scanning electron microscopy [J].
Kievits, Arent J. ;
Duinkerken, B. H. Peter ;
Fermie, Job ;
Lane, Ryan ;
Giepmans, Ben N. G. ;
Hoogenboom, Jacob P. .
ULTRAMICROSCOPY, 2024, 256
[30]   Energy selective scanning electron microscopy to reduce the effect of contamination layers on scanning electron microscope dopant mapping [J].
Rodenburg, C. ;
Jepson, M. A. E. ;
Bosch, E. G. T. ;
Dapor, M. .
ULTRAMICROSCOPY, 2010, 110 (09) :1185-1191