High-speed preparation and dielectric properties of BaTi4O9 film by laser chemical vapor deposition

被引：13

作者：

Guo, Dongyun ^{[1
,2
,3
]}

Goto, Takashi ^{[3
]}

Wang, Chuanbin ^{[1
,2
]}

Shen, Qiang ^{[1
,2
]}

Zhang, Lianmeng ^{[1
,2
]}

机构：

[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China

[2] Wuhan Univ Technol, Sch Mat Sci & Engn, Wuhan 430070, Peoples R China

[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2012年 / 23卷 / 04期

关键词：

MICROWAVE APPLICATIONS; SINGLE-CRYSTALS; ZIRCONIA FILMS; CERAMICS; CVD;

D O I：

10.1007/s10854-011-0517-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

BaTi4O9 film was prepared on Pt/Ti/SiO2/Si substrate by laser chemical vapor deposition. The microstructure and dielectric properties were investigated. The single-phase BaTi4O9 film with random orientation was obtained. The surface consisted of round and rectangular grains, and the cross-section was columnar microstructure. The deposition rate (R-dep) was 135 mu m h(-1). The dielectric constant (epsilon(r)) and loss (tan delta) were 35 and 0.01, respectively, at 1 MHz. With increasing temperature, epsilon(r) increased and showed a broad peak around 736 K, which indicated there might be a phase transition.

引用

页码：897 / 900

页数：4

共 17 条

[1] FUNDAMENTALS OF CHEMICAL VAPOR-DEPOSITION [J].